MJD31C-13 Tech Spezifikatioune
Diodes Incorporated - MJD31C-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - MJD31C-13
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A | |
| Transistor Type | NPN | |
| Supplier Device Package | TO-252, (D-Pak) | |
| Serie | - | |
| Power - Max | 1.56 W | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 3MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V | |
| Aktuell - Kollektorat Cutoff (Max) | 1µA | |
| Aktuell - Sammler (Ic) (Max) | 3 A | |
| Basis Produktnummer | MJD31 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated MJD31C-13.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | MJD31C-13 | MJD3055TF | MJD3055T4 | MJD31C |
| Hiersteller | Diodes Incorporated | onsemi | onsemi | STMicroelectronics |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Supplier Device Package | TO-252, (D-Pak) | D-Pak | DPAK | DPAK |
| Serie | - | - | - | - |
| Aktuell - Sammler (Ic) (Max) | 3 A | 10 A | 10 A | 3 A |
| Frequenz - Iwwergang | 3MHz | 2MHz | 2MHz | - |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A | 8V @ 3.3A, 10A | 1.1V @ 400mA, 4A | 1.2V @ 375mA, 3A |
| Power - Max | 1.56 W | 1.75 W | 20 W | 15 W |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V | 20 @ 4A, 4V | 20 @ 4A, 4V | 10 @ 3A, 4V |
| Transistor Type | NPN | NPN | NPN | NPN |
| Basis Produktnummer | MJD31 | MJD30 | MJD30 | MJD31 |
| Aktuell - Kollektorat Cutoff (Max) | 1µA | 50µA | 50µA | 50µA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 60 V | 60 V | 100 V |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Eroflueden MJD31C-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir MJD31C-13 - Diodes Incorporated.
MJD3055TFonsemiTRANS NPN 60V 10A DPAKMJD3055T4onsemiTRANS PWR NPN 10A 60V DPAKMJD31CSTMicroelectronicsTRANS NPN 100V 3A DPAK
MJD31CITUonsemiTRANS NPN 100V 3A IPAKMJD3055T4GonsemiTRANS NPN 60V 10A DPAK
MJD31C-1Fairchild (onsemi)MJD31CITUFairchild SemiconductorTRANS NPN 100V 3A IPAKMJD31C-1GAMI Semiconductor/onsemi
MJD31C MOSSTMicroelectronicsMJD31 MOSAMI Semiconductor/onsemi
MJD31C1GonsemiTRANS NPN 100V 3A IPAKMJD30CTFFairchild (onsemi)
MJD31CAJNexperiaMJD31CG MOSAMI Semiconductor/onsemiMJD31CETFonsemiTRANS NPN
MJD3055T4G MOSMJD31CEITUFairchild SemiconductorTRANS NPN 100V 3A TO252-3MJD31CGonsemiTRANS NPN 100V 3A DPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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