MBR20H100CT-E1 Tech Spezifikatioune
Diodes Incorporated - MBR20H100CT-E1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - MBR20H100CT-E1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Viru (Vf) (Max) @ Wann | 770 mV @ 10 A | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Schottky | |
| Supplier Device Package | TO-220-3 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 4.5 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 10A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated MBR20H100CT-E1.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | MBR20H100CT-E1 | MBR20H100CT | MBR2090CT | MBR20H100CTG-E3/45 |
| Hiersteller | Diodes Incorporated | Taiwan Semiconductor Corporation | SMC Diode Solutions | Vishay General Semiconductor - Diodes Division |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 10A | 20A | - | 10A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220-3 | TO-220AB | TO-220AB | TO-220-3 |
| Aktuell - Reverse Leakage @ Vr | 4.5 µA @ 100 V | 5 µA @ 100 V | 1 mA @ 90 V | 3.5 µA @ 100 V |
| Serie | - | - | - | - |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 150°C | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 90 V | 100 V |
| Voltage - Viru (Vf) (Max) @ Wann | 770 mV @ 10 A | 950 mV @ 20 A | 900 mV @ 10 A | 850 mV @ 10 A |
| Package protegéieren | Tube | Tube | Tube | Tube |
Eroflueden MBR20H100CT-E1 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir MBR20H100CT-E1 - Diodes Incorporated.
MBR20H100CTTaiwan Semiconductor CorporationDIODE ARRAY SCHOTTKY 100V TO220
MBR20H100GAMI Semiconductor/onsemi
MBR2080FCTMBR2090CTSMC Diode Solutions20A, 90V, TO-220AB, SCHOTTKY RECMBR20B60FCTHSIRECTMBR20H100CTG-E3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY SCHOTTKY 100V TO220
MBR20H100CTGonsemiDIODE ARRAY SCHOTTKY 100V TO220MBR2090CTGonsemiDIODE ARRAY SCHOTTKY 90V TO220AB
MBR20H100CTF-E1Diodes IncorporatedDIODE ARRAY SCHOTTKY 100V TO220FMBR20H100CTonsemiDIODE ARRAY SCHOTTKY 100V TO220MBR2090CTonsemiDIODE ARRAY SCHOTTKY 90V TO220AB
MBR20H100CTG-E3Electro-Films (EFI) / VishayMBR20H150CTGonsemiDIODE ARRAY SCHOTTKY 150V TO220MBR20B200CTHCIRECTMBR20H150CTTaiwan Semiconductor CorporationDIODE SCHOTTKY 150V 20A TO220ABMBR20H100CTHE3Electro-Films (EFI) / VishayMBR20H100CTFBCDMBR2080CTGonsemiDIODE ARRAY SCHOTTKY 80V TO220AB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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