GBU810 Tech Spezifikatioune
Diodes Incorporated - GBU810 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - GBU810
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Peak Reverse (Max) | 1 kV | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 4 A | |
| Technologie | Standard | |
| Supplier Device Package | GBU | |
| Serie | - | |
| Package / Case | 4-SIP, GBU |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 8 A | |
| Basis Produktnummer | GBU810 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated GBU810.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | GBU810 | GBU8K-E3/51 | GBU8J-E3/51 | GBU8J-E3/45 |
| Hiersteller | Diodes Incorporated | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Voltage - Peak Reverse (Max) | 1 kV | 800 V | 600 V | 600 V |
| Basis Produktnummer | GBU810 | GBU8 | GBU8 | GBU8 |
| Supplier Device Package | GBU | GBU | GBU | GBU |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tube | Bulk | Tray | Tube |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | 5 µA @ 800 V | 5 µA @ 600 V | 5 µA @ 600 V |
| Serie | - | - | - | - |
| Package / Case | 4-SIP, GBU | 4-SIP, GBU | 4-SIP, GBU | 4-SIP, GBU |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 4 A | 1 V @ 8 A | 1 V @ 8 A | 1 V @ 8 A |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 8 A | 3.9 A | 3.9 A | 3.9 A |
Eroflueden GBU810 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir GBU810 - Diodes Incorporated.
GBU8K-E3/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 800V 3.9A GBU
GBU8D-E3/72Electro-Films (EFI) / VishayGBU8J-E3/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 600V 3.9A GBU
GBU860Diodes IncorporatedGBU8J-E3/45Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 600V 3.9A GBU
GBU806HY Electronic (Cayman) LimitedGLASS PASSIVATED BRIDGE RECTIFIE
GBU8J-BPMicro Commercial CoBRIDGE RECT 1PHASE 600V 8A GBU
GBU810SMC Diode SolutionsBRIDGE RECT 1PHASE 1KV 8A GBUGBU808Diodes IncorporatedBRIDGE RECT 1PHASE 800V 8A GBUGBU808Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 800V 8A GBUGBU808SMC Diode SolutionsBRIDGE RECT 1PHASE 800V 8A GBUGBU810Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 1000V 8A GBU
GBU806-TULITEONGBU806Diodes IncorporatedBRIDGE RECT 1PHASE 600V 8A GBUGBU810_HFLITEON
GBU807Taiwan Semiconductor CorporationBRIDGE RECT 1PHASE 1KV 8A GBU
GBU8JSPANJITGBU8K-E3/45Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 800V 3.9A GBU| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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