GBJ2510 Tech Spezifikatioune
Diodes Incorporated - GBJ2510 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - GBJ2510
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Peak Reverse (Max) | 1 kV | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 12.5 A | |
| Technologie | Standard | |
| Supplier Device Package | GBJ | |
| Serie | - | |
| Package / Case | 4-SIP, GBJ |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25 A | |
| Basis Produktnummer | GBJ2510 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | RoHS net konform |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated GBJ2510.
| Produktiounsattriff |  |
|
 |
 |
|---|---|---|---|---|
| Part Number | GBJ2510 | GBJ2510-F | GBJ2510 | GBJ25J |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Yangzhou Yangjie Electronic Technology Co.,Ltd | GeneSiC Semiconductor |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 12.5 A | 1.05 V @ 12.5 A | 1 V @ 12.5 A | 1.05 V @ 12.5 A |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package / Case | 4-SIP, GBJ | 4-SIP, GBJ | 4-SIP, GBJ | 4-SIP, GBJ |
| Package protegéieren | Tube | Tube | Box | Bulk |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Voltage - Peak Reverse (Max) | 1 kV | 1 kV | 1 kV | 600 V |
| Basis Produktnummer | GBJ2510 | GBJ2510 | - | GBJ25 |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 1000 V | 10 µA @ 1000 V | 5 µA @ 1000 V | 10 µA @ 600 V |
| Serie | - | - | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25 A | 25 A | 25 A | 25 A |
| Technologie | Standard | Standard | Standard | Standard |
| Supplier Device Package | GBJ | GBJ | GBJ | GBJ |
Eroflueden GBJ2510 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir GBJ2510 - Diodes Incorporated.
GBJ2508GGBJ2510-FDiodes IncorporatedBRIDGE RECT 1PHASE 1KV 25A GBJGBJ2510Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 1000V 25A 6KBJGBJ25JGeneSiC Semiconductor600V 25A GBJ SINGLE PHASE BRIDGE
GBJ25JSURGE25A -600V - GBJ - BRIDGE
GBJ2506-BPMicro Commercial CoBRIDGE RECT 1PHASE 600V 25A GBJ
GBJ25KGood-Ark SemiconductorBRIDGE RECTIFIER, GENERAL PURPOS
GBJ2510FLITEON
GBJ2510HY Electronic (Cayman) LimitedGLASS PASSIVATED BRIDGE RECTIFIE
GBJ2508SMC Diode SolutionsBRIDGE RECT 1PHASE 800V 25A GBJGBJ2508-FDiodes IncorporatedBRIDGE RECT 1PHASE 800V 25A GBJGBJ2510SMC Diode SolutionsBRIDGE RECT 1PHASE 1KV 25A GBJ
GBJ2506-F-33Diodes IncorporatedGBJ2508FLITEGBJ25JLLITEONGBJ25ALITEONGBJ2508Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 800V 25A 6KBJGBJ2506-FDiodes IncorporatedBRIDGE RECT 1PHASE 600V 25A GBJ| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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