ES3JB-13-F Tech Spezifikatioune
Diodes Incorporated - ES3JB-13-F technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - ES3JB-13-F
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | SMB | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 35 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AA, SMB | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | 45pF @ 4V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated ES3JB-13-F.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | ES3JB-13-F | ES3JBF | ES3GHE3_A/H | ES3GBF |
| Hiersteller | Diodes Incorporated | Yangjie Technology | Vishay General Semiconductor - Diodes Division | Yangjie Technology |
| Supplier Device Package | SMB | - | DO-214AB (SMC) | - |
| Technologie | Standard | - | Standard | - |
| Voltage - DC Reverse (Vr) (Max) | 600 V | - | 400 V | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 3 A | - | 1.1 V @ 3 A | - |
| Package / Case | DO-214AA, SMB | - | DO-214AB, SMC | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | - | Fast Recovery =< 500ns, > 200mA (Io) | - |
| Reverse Recovery Time (trr) | 35 ns | - | 50 ns | - |
| Capacitance @ Vr, F. | 45pF @ 4V, 1MHz | - | 30pF @ 4V, 1MHz | - |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | - | -55°C ~ 150°C | - |
| Serie | - | - | Automotive, AEC-Q101 | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | - | Surface Mount | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | - | 3A | - |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | - | 10 µA @ 400 V | - |
Eroflueden ES3JB-13-F PDF DataDhusts an Diodes Incorporated Dokumentatioun fir ES3JB-13-F - Diodes Incorporated.
ES3M-13-FDiodes IncorporatedES3J-13-FDiodes Incorporated
ES3JB-FLITEONES3JBFYangjie TechnologyDiodes - Rectifiers - Single SMB
ES3JB R5Taiwan SemiconductorES3K-13-FDiodes Incorporated
ES3J-E3/57TElectro-Films (EFI) / VishayES3JBGSHIKUESES3GHE3_A/HVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 3A DO214ABES3JB-TRLITEON
ES3GTRMicrosemi
ES3J_NLFairchild (onsemi)ES3K-E3/57TElectro-Films (EFI) / VishayES3GBFYangjie TechnologyDiodes - Rectifiers - Single SMBES3J R6GTaiwan Semiconductor CorporationDIODE GEN PURP 600V 3A DO214ABES3KB-13-FDiodes IncorporatedES3J-FLITEONES3GBGSHIKUES| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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