DRDNB16W-7 Tech Spezifikatioune
Diodes Incorporated - DRDNB16W-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DRDNB16W-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Voltage - Collector Emitter Breakdown (Max) | 50 V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | |
Transistor Type | NPN - Pre-Biased | |
Supplier Device Package | SOT-363 | |
Serie | - | |
Resistor - Emitterbasis (R2) | 10 kOhms | |
Resistor - Base (R1) | 1 kOhms | |
Power - Max | 200 mW |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | 6-TSSOP, SC-88, SOT-363 | |
Package protegéieren | Tape & Reel (TR) | |
Mounting Type | Surface Mount | |
Frequenz - Iwwergang | 200 MHz | |
DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V | |
Aktuell - Kollektorat Cutoff (Max) | 500nA | |
Aktuell - Sammler (Ic) (Max) | 600 mA | |
Basis Produktnummer | DRDNB16 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DRDNB16W-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DRDNB16W-7 | DRDPB26W-7 | DRDP006W-7 | DRD515S2Z |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | IPD |
Resistor - Base (R1) | 1 kOhms | 220 Ohms | - | - |
Transistor Type | NPN - Pre-Biased | PNP - Pre-Biased + Diode | PNP - Pre-Biased + Diode | - |
Serie | - | - | DRD (xxxx) W | - |
Supplier Device Package | SOT-363 | SOT-363 | SOT-363 | - |
DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V | 47 @ 50mA, 5V | - | - |
Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | - |
Aktuell - Sammler (Ic) (Max) | 600 mA | 600 mA | 600 mA | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Basis Produktnummer | DRDNB16 | DRDPB26 | DRDP006 | - |
Aktuell - Kollektorat Cutoff (Max) | 500nA | 500nA | 10nA (ICBO) | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V | 60 V | - |
Frequenz - Iwwergang | 200 MHz | 200 MHz | 200 MHz | - |
Resistor - Emitterbasis (R2) | 10 kOhms | 4.7 kOhms | - | - |
Power - Max | 200 mW | 200 mW | 200 mW | - |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | 300mV @ 2.5mA, 50mA | 400mV @ 15mA, 150mA | - |
Eroflueden DRDNB16W-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DRDNB16W-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.