DNBT8105-7 Tech Spezifikatioune
Diodes Incorporated - DNBT8105-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DNBT8105-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A | |
| Transistor Type | NPN | |
| Supplier Device Package | SOT-23-3 | |
| Serie | - | |
| Power - Max | 600 mW | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 150MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V | |
| Aktuell - Kollektorat Cutoff (Max) | 100nA | |
| Aktuell - Sammler (Ic) (Max) | 1 A | |
| Basis Produktnummer | DNBT8105 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DNBT8105-7.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | DNBT8105-7 | MJE13003 | 2N5191 | 2N2222A |
| Hiersteller | Diodes Incorporated | onsemi | onsemi | Microchip Technology |
| Frequenz - Iwwergang | 150MHz | 10MHz | 2MHz | - |
| Power - Max | 600 mW | 1.4 W | 40 W | 500 mW |
| Serie | - | SWITCHMODE™ | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 200°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-206AA, TO-18-3 Metal Can |
| Aktuell - Sammler (Ic) (Max) | 1 A | 1.5 A | 4 A | 800 mA |
| Basis Produktnummer | DNBT8105 | MJE13 | 2N5191 | 2N2222 |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Bulk |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A | 3V @ 500mA, 1.5A | 600mV @ 150mA, 1.5A | 1V @ 50mA, 500mA |
| Supplier Device Package | SOT-23-3 | TO-126 | TO-126 | TO-18 |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | 400 V | 60 V | 50 V |
| Aktuell - Kollektorat Cutoff (Max) | 100nA | - | 1mA | 50nA |
| Transistor Type | NPN | NPN | NPN | NPN |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V | 8 @ 500mA, 2V | 25 @ 1.5A, 2V | 100 @ 150mA, 10V |
Eroflueden DNBT8105-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DNBT8105-7 - Diodes Incorporated.
DNB6314DYNEXIGBT ModuleDNB6312DYNEXIGBT ModuleMJE13003onsemiTRANS NPN 400V 1.5A TO1262N5191onsemiTRANS NPN PWR GP 4A 60V TO225AADNB6315DYNEXIGBT Module2N2222AMicrochip TechnologyTRANS NPN 50V 0.8A TO18DNB6432DYNEXIGBT ModuleDNB6428DYNEXIGBT Module
MJD340T4STMicroelectronicsTRANS NPN 300V 0.5A DPAKDNB6430DYNEXIGBT ModuleDNB6436DYNEXIGBT ModuleDNB8105-TDNB6313DYNEXIGBT ModuleMMBTA56Q-7-FDiodes IncorporatedTRANS PNP 80V 0.5A SOT23-3DNB6311DYNEXIGBT ModuleDNB6434DYNEXIGBT Module
DNBT8105Diodes IncorporatedDNB6426DYNEXIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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