DMTH6016LFDFWQ-7R Tech Spezifikatioune
Diodes Incorporated - DMTH6016LFDFWQ-7R technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMTH6016LFDFWQ-7R
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | U-DFN2020-6 (SWP) (Type F) | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V | |
Power Dissipation (Max) | 1.06W (Ta) | |
Package / Case | 6-UDFN Exposed Pad | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 925 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.4A (Ta) | |
Basis Produktnummer | DMTH6016 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMTH6016LFDFWQ-7R.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMTH6016LFDFWQ-7R | DMTH6016LPSQ-13 | DMTH6010SCT | DMTH6005LK3Q-13 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.4A (Ta) | 9.8A (Ta), 37A (Tc) | 100A (Tc) | 90A (Tc) |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 925 pF @ 30 V | 864 pF @ 30 V | 1940 pF @ 30 V | 2962 pF @ 30 V |
Supplier Device Package | U-DFN2020-6 (SWP) (Type F) | PowerDI5060-8 | TO-220-3 | TO-252-3 |
Package / Case | 6-UDFN Exposed Pad | 8-PowerTDFN | TO-220-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
Vgs (th) (Max) @ Id | 3V @ 250µA | 2.5V @ 250µA | 4V @ 250µA | 3V @ 250µA |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 10V | 4.5V, 10V |
Basis Produktnummer | DMTH6016 | DMTH6016 | DMTH6010 | DMTH6005 |
Power Dissipation (Max) | 1.06W (Ta) | 2.6W (Ta), 37.5W (Tc) | 2.8W (Ta), 125W (Tc) | 2.1W (Ta), 100W (Tc) |
Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V | 16mOhm @ 20A, 10V | 7.2mOhm @ 20A, 10V | 5.6mOhm @ 50A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V | 17 nC @ 10 V | 36.3 nC @ 10 V | 47.1 nC @ 10 V |
Eroflueden DMTH6016LFDFWQ-7R PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMTH6016LFDFWQ-7R - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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