DMT6016LSS-13 Tech Spezifikatioune
Diodes Incorporated - DMT6016LSS-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMT6016LSS-13
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V | |
Power Dissipation (Max) | 1.5W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 864 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.2A (Ta) | |
Basis Produktnummer | DMT6016 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMT6016LSS-13.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMT6016LSS-13 | DMT6017LSS-13 | DMT6016LFDF-7 | DMT6015LFV-13 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Input Capacitance (Ciss) (Max) @ Vds | 864 pF @ 30 V | 864 pF @ 30 V | 864 pF @ 30 V | 1103 pF @ 30 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.2A (Ta) | 9.2A (Ta) | 8.9A (Ta) | 9.5A (Ta), 35A (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 1.5W (Ta) | 1.5W (Ta) | 820mW (Ta) | 2.2W (Ta), 30W (Tc) |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±20V | ±20V | ±16V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 3V @ 250µA | 2.5V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | 17 nC @ 10 V | 17 nC @ 10 V | 18.9 nC @ 10 V |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 6-UDFN Exposed Pad | 8-PowerVDFN |
Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V | 18mOhm @ 10A, 10V | 16mOhm @ 10A, 10V | 16mOhm @ 10A, 10V |
Supplier Device Package | 8-SO | 8-SO | U-DFN2020-6 (Type F) | PowerDI3333-8 (Type UX) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Basis Produktnummer | DMT6016 | DMT6017 | DMT6016 | DMT6015 |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
Eroflueden DMT6016LSS-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMT6016LSS-13 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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