DMP6110SSDQ-13 Tech Spezifikatioune
Diodes Incorporated - DMP6110SSDQ-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMP6110SSDQ-13
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 105mOhm @ 4.5A, 10V | |
Power Dissipation (Max) | 1.2W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 969 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.8A (Tc) | |
Basis Produktnummer | DMP6110 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMP6110SSDQ-13 | DMP6110SSSQ-13 | DMP6110SVT-7 | DMP6023LFGQ-13 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 155°C (TJ) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Rds On (Max) @ Id, Vgs | 105mOhm @ 4.5A, 10V | 110mOhm @ 4.5A, 10V | 105mOhm @ 4.5A, 10V | 25mOhm @ 5A, 10V |
Basis Produktnummer | DMP6110 | DMP6110 | DMP6110 | DMP6023 |
FET Feature | - | - | - | - |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | - | Automotive, AEC-Q101 |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.8A (Tc) | 3.3A (Ta), 7.8A (Tc) | 7.3A (Tc) | 7.7A (Ta) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | SOT-23-6 Thin, TSOT-23-6 | 8-PowerVDFN |
Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V | 19.4 nC @ 10 V | 17.2 nC @ 10 V | 53.1 nC @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
Power Dissipation (Max) | 1.2W (Ta) | 1.5W (Ta) | 1.2W (Ta) | 1W (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | 8-SO | 8-SO | TSOT-23-6 | POWERDI3333-8 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 969 pF @ 30 V | 1030 pF @ 30 V | 969 pF @ 30 V | 2569 pF @ 30 V |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Eroflueden DMP6110SSDQ-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMP6110SSDQ-13 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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