DMP56D0UFB-7B Tech Spezifikatioune
Diodes Incorporated - DMP56D0UFB-7B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMP56D0UFB-7B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | X1-DFN1006-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 100mA, 4V | |
| Power Dissipation (Max) | 425mW (Ta) | |
| Package / Case | 3-UFDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 50.54 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.58 nC @ 4 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4V | |
| Entworf fir Source Voltage (Vdss) | 50 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | |
| Basis Produktnummer | DMP56 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMP56D0UFB-7B.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | DMP56D0UFB-7B | DMP56D0UFB-7 | DMP57D5UFB-7 | DMP45H21DHE-13 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 100mA, 4V | 6Ohm @ 100mA, 4V | 6Ohm @ 100mA, 4V | 21Ohm @ 300mA, 10V |
| Serie | - | - | - | - |
| Basis Produktnummer | DMP56 | DMP56 | - | DMP45 |
| Package / Case | 3-UFDFN | 3-UFDFN | 3-UFDFN | TO-261-4, TO-261AA |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50.54 pF @ 25 V | 50.54 pF @ 25 V | 29 pF @ 4 V | 1003 pF @ 25 V |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 0.58 nC @ 4 V | 0.58 nC @ 4 V | - | 4.2 nC @ 10 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | X1-DFN1006-3 | X1-DFN1006-3 | X1-DFN1006-3 | SOT-223-3 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (Max) | ±8V | ±8V | ±8V | ±30V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | 200mA (Ta) | 200mA (Ta) | 600mA (Tc) |
| Entworf fir Source Voltage (Vdss) | 50 V | 50 V | 50 V | 450 V |
| Power Dissipation (Max) | 425mW (Ta) | 425mW (Ta) | 425mW (Ta) | 12.5W (Tc) |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | 1.2V @ 250µA | 1V @ 250µA | 5V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4V | 2.5V, 4V | 2.5V, 4V | 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden DMP56D0UFB-7B PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMP56D0UFB-7B - Diodes Incorporated.
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DMP45H4D9HK3-13Diodes IncorporatedMOSFET P-CH 450V 4.7A TO252DMP510DL-7Diodes IncorporatedMOSFET P-CH 50V 180MA SOT23DMP45H150DHE-13Diodes IncorporatedMOSFET P-CH 450V 250MA SOT223DMP4065S-7 MOSDiodes Incorporated| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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