DMP31D0UFB4-7B Tech Spezifikatioune
Diodes Incorporated - DMP31D0UFB4-7B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMP31D0UFB4-7B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 1.1V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | X2-DFN1006-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 400mA, 4.5V | |
| Power Dissipation (Max) | 460mW (Ta) | |
| Package / Case | 3-XFDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 76 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.9 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 540mA (Ta) | |
| Basis Produktnummer | DMP31 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMP31D0UFB4-7B.
| Produktiounsattriff |  |
 |
|
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|---|---|---|---|---|
| Part Number | DMP31D0UFB4-7B | DMP32D4S-13 | DMP3160L-7 | DMP31D0U-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 400mA, 4.5V | 2.4Ohm @ 300mA, 10V | 122mOhm @ 2.7A, 10V | 1Ohm @ 400mA, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 76 pF @ 15 V | 51.16 pF @ 15 V | 227 pF @ 10 V | 76 pF @ 15 V |
| Vgs (th) (Max) @ Id | 1.1V @ 250µA | 2.4V @ 250µA | 2.1V @ 250µA | 1.1V @ 250µA |
| Vgs (Max) | ±8V | ±20V | ±20V | ±8V |
| Package / Case | 3-XFDFN | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 460mW (Ta) | 370mW (Ta) | 1.08W (Ta) | 450mW (Ta) |
| Serie | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 540mA (Ta) | 300mA (Ta) | 2.7A (Ta) | 530mA (Ta) |
| Basis Produktnummer | DMP31 | DMP32 | DMP3160 | DMP31 |
| Gate Charge (Qg) (Max) @ Vgs | 0.9 nC @ 4.5 V | 0.6 nC @ 4.5 V | - | 0.9 nC @ 4.5 V |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Supplier Device Package | X2-DFN1006-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 4.5V, 10V | 4.5V, 10V | 1.8V, 4.5V |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
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DMP32D4SVBSEMIDMP3165L-7Diodes IncorporatedMOSFET P-CH 30V 3.3A SOT23 T&R| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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