DMP2069UFY4-7 Tech Spezifikatioune
Diodes Incorporated - DMP2069UFY4-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMP2069UFY4-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DFN2015H4-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 54mOhm @ 2.5A, 4.5V | |
Power Dissipation (Max) | 530mW (Ta) | |
Package / Case | 3-XFDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 214 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 9.1 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | |
Basis Produktnummer | DMP2069 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMP2069UFY4-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMP2069UFY4-7 | DMP2100UQ-7 | DMP2066LSN-7 | DMP2070UCB6-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Package / Case | 3-XFDFN | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | 6-UFBGA, WLBGA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 54mOhm @ 2.5A, 4.5V | 38mOhm @ 3.5A, 10V | 40mOhm @ 4.6A, 4.5V | 70mOhm @ 1A, 4.5V |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 10V | 2.5V, 4.5V | 1.5V, 4.5V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 214 pF @ 10 V | 216 pF @ 15 V | 820 pF @ 15 V | 210 pF @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | - | Automotive, AEC-Q101 | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | 4.3A (Ta) | 4.6A (Ta) | 2.5A (Ta) |
Vgs (Max) | ±8V | ±10V | ±12V | ±8V |
Power Dissipation (Max) | 530mW (Ta) | 800mW (Ta) | 1.25W (Ta) | 920mW (Ta) |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1.4V @ 250µA | 1.2V @ 250µA | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9.1 nC @ 4.5 V | 9.1 nC @ 4.5 V | 10.1 nC @ 4.5 V | 2.9 nC @ 4.5 V |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Basis Produktnummer | DMP2069 | DMP2100 | DMP2066 | DMP2070 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Supplier Device Package | DFN2015H4-3 | SOT-23-3 | SC-59-3 | U-WLB1510-6 |
Eroflueden DMP2069UFY4-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMP2069UFY4-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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