DMP2006UFG-13 Tech Spezifikatioune
Diodes Incorporated - DMP2006UFG-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMP2006UFG-13
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerDI3333-8 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 5.5mOhm @ 15A, 4.5V | |
Power Dissipation (Max) | 2.3W (Ta) | |
Package / Case | 8-PowerVDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17.5A (Ta), 40A (Tc) | |
Basis Produktnummer | DMP2006 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMP2006UFG-13.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMP2006UFG-13 | DMP2008UFG-7 | DMP2006UFGQ-7 | DMP2007UFG-13 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Vgs (Max) | ±10V | ±8V | ±10V | ±12V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17.5A (Ta), 40A (Tc) | 14A (Ta), 54A (Tc) | 17.5A (Ta), 40A (Tc) | 18A (Ta), 40A (Tc) |
Serie | - | - | Automotive, AEC-Q101 | - |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Basis Produktnummer | DMP2006 | DMP2008 | DMP2006 | DMP2007 |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 1.5V, 4.5V | 1.5V, 4.5V | 2.5V, 10V |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V | 72 nC @ 4.5 V | 200 nC @ 10 V | 85 nC @ 10 V |
Power Dissipation (Max) | 2.3W (Ta) | 2.4W (Ta), 41W (Tc) | 2.3W (Ta), 41W (Tc) | 2.3W (Ta) |
Rds On (Max) @ Id, Vgs | 5.5mOhm @ 15A, 4.5V | 8mOhm @ 12A, 4.5V | 5.5mOhm @ 15A, 4.5V | 5.5mOhm @ 15A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package / Case | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN |
Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 10 V | 6909 pF @ 10 V | 7500 pF @ 10 V | 4621 pF @ 10 V |
Supplier Device Package | PowerDI3333-8 | PowerDI3333-8 | PowerDI3333-8 | POWERDI3333-8 |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden DMP2006UFG-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMP2006UFG-13 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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