DMP1011LFV-13 Tech Spezifikatioune
Diodes Incorporated - DMP1011LFV-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMP1011LFV-13
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | |
| Vgs (Max) | -6V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerDI3333-8 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 12A, 4.5V | |
| Power Dissipation (Max) | 2.16W | |
| Package / Case | 8-PowerVDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 913 pF @ 6 V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 6 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 12 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Tc) | |
| Basis Produktnummer | DMP1011 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMP1011LFV-13.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | DMP1011LFV-13 | DMP1009UFDF-7 | DMP1012UFDF-7 | DMP1012UCB9-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Entworf fir Source Voltage (Vdss) | 12 V | 12 V | 12 V | 8 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Tc) | 15A (Ta) | 12.6A (Ta), 20A (Tc) | 10A (Ta) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 2.16W | 2W (Ta) | 720mW (Ta) | 890mW (Ta) |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package / Case | 8-PowerVDFN | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 9-UFBGA, WLBGA |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 1.8V, 4.5V | 1.8V, 4.5V | 2.5V, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 913 pF @ 6 V | 1860 pF @ 10 V | 1344 pF @ 10 V | 1060 pF @ 4 V |
| Serie | - | - | - | - |
| Vgs (Max) | -6V | ±8V | ±8V | -6V |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | 1V @ 250µA | 900mV @ 250µA | 1.1V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Basis Produktnummer | DMP1011 | DMP1009 | DMP1012 | DMP1012 |
| Supplier Device Package | PowerDI3333-8 | U-DFN2020-6 (Type F) | U-DFN2020-6 (Type F) | U-WLB1515-9 |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 12A, 4.5V | 11mOhm @ 5A, 4.5V | 15mOhm @ 5A, 4.5V | 10mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 6 V | 44 nC @ 8 V | 31 nC @ 8 V | 10.5 nC @ 4.5 V |
Eroflueden DMP1011LFV-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMP1011LFV-13 - Diodes Incorporated.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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