DMN7022LFGQ-7 Tech Spezifikatioune
Diodes Incorporated - DMN7022LFGQ-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN7022LFGQ-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerDI3333-8 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 7.2A, 10V | |
Power Dissipation (Max) | 2W (Ta) | |
Package / Case | 8-PowerVDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2737 pF @ 35 V | |
Gate Charge (Qg) (Max) @ Vgs | 56.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 75 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23A (Tc) | |
Basis Produktnummer | DMN7022 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN7022LFGQ-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN7022LFGQ-7 | DMN7022LFG-7 | DMN67D7L-7 | DMN67D8L-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | - | - | - | - |
Rds On (Max) @ Id, Vgs | 22mOhm @ 7.2A, 10V | 22mOhm @ 7.2A, 10V | 5Ohm @ 500mA, 10V | 5Ohm @ 500mA, 10V |
Entworf fir Source Voltage (Vdss) | 75 V | 75 V | 60 V | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 2737 pF @ 35 V | 2737 pF @ 35 V | 22 pF @ 25 V | 22 pF @ 25 V |
Vgs (Max) | ±20V | ±20V | ±40V | ±30V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23A (Tc) | 7.8A (Ta) | 210mA (Ta) | 210mA (Ta) |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
Basis Produktnummer | DMN7022 | DMN7022 | DMN67 | DMN67 |
Package / Case | 8-PowerVDFN | 8-PowerVDFN | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Gate Charge (Qg) (Max) @ Vgs | 56.5 nC @ 10 V | 56.5 nC @ 10 V | 0.821 nC @ 10 V | 0.82 nC @ 10 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 5V, 10V | 5V, 10V |
Power Dissipation (Max) | 2W (Ta) | 900mW (Ta) | 570mW (Ta) | 340mW (Ta) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | PowerDI3333-8 | PowerDI3333-8 | SOT-23-3 | SOT-23-3 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden DMN7022LFGQ-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN7022LFGQ-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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