DMN61D8LVTQ-7 Tech Spezifikatioune
Diodes Incorporated - DMN61D8LVTQ-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN61D8LVTQ-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 2V @ 1mA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TSOT-26 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 1.8Ohm @ 150mA, 5V | |
Power - Max | 820mW | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 12.9pF @ 12V | |
Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 5V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 60V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 630mA | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | DMN61 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN61D8LVTQ-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN61D8LVTQ-7 | DMN61D8LVT-7 | DMN61D9UDW-7 | DMN62D0LFB-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | - |
Entworf fir Source Voltage (Vdss) | 60V | 60V | 60V | 60 V |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | 6-TSSOP, SC-88, SOT-363 | 3-UFDFN |
Basis Produktnummer | DMN61 | DMN61 | DMN61 | DMN62 |
Serie | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | Logic Level Gate | Logic Level Gate | - | - |
Power - Max | 820mW | 820mW | 320mW | - |
Rds On (Max) @ Id, Vgs | 1.8Ohm @ 150mA, 5V | 1.8Ohm @ 150mA, 5V | 2Ohm @ 50mA, 5V | 2Ohm @ 100mA, 4V |
Supplier Device Package | TSOT-26 | TSOT-26 | SOT-363 | X1-DFN1006-3 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 5V | 0.74nC @ 5V | 0.4nC @ 4.5V | 0.45 nC @ 4.5 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 2V @ 1mA | 2V @ 1mA | 1V @ 250µA | 1V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 630mA | 630mA | 350mA | 100mA (Ta) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 12.9pF @ 12V | 12.9pF @ 12V | 28.5pF @ 30V | 32 pF @ 25 V |
Eroflueden DMN61D8LVTQ-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN61D8LVTQ-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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