DMN6066SSS-13 Tech Spezifikatioune
Diodes Incorporated - DMN6066SSS-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN6066SSS-13
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 66mOhm @ 4.5A, 10V | |
Power Dissipation (Max) | 1.56W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 502 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 10.3 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.7A (Ta) | |
Basis Produktnummer | DMN6066 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN6066SSS-13.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN6066SSS-13 | DMN6040SVTQ-7 | DMN6068LK3-13 | DMN6068SEQ-13 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 502 pF @ 30 V | 1287 pF @ 25 V | 502 pF @ 30 V | 502 pF @ 30 V |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
Power Dissipation (Max) | 1.56W (Ta) | 1.2W (Ta) | 2.12W (Ta) | 2W (Ta) |
Supplier Device Package | 8-SO | TSOT-26 | TO-252-3 | SOT-223-3 |
Serie | - | - | - | Automotive, AEC-Q101 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Rds On (Max) @ Id, Vgs | 66mOhm @ 4.5A, 10V | 44mOhm @ 4.3A, 10V | 68mOhm @ 12A, 10V | 68mOhm @ 12A, 10V |
Basis Produktnummer | DMN6066 | DMN6040 | DMN6068 | DMN6068 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | SOT-23-6 Thin, TSOT-23-6 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-261-4, TO-261AA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.7A (Ta) | 5A (Ta) | 6A (Ta) | 4.1A (Ta) |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 10.3 nC @ 10 V | 22.4 nC @ 10 V | 10.3 nC @ 10 V | 10.3 nC @ 10 V |
Eroflueden DMN6066SSS-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN6066SSS-13 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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