DMN4010LFG-7 Tech Spezifikatioune
Diodes Incorporated - DMN4010LFG-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN4010LFG-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerDI3333-8 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 12mOhm @ 14A, 10V | |
Power Dissipation (Max) | 930mW (Ta) | |
Package / Case | 8-PowerVDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1810 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.5A (Ta) | |
Basis Produktnummer | DMN4010 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN4010LFG-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN4010LFG-7 | DMN4015LK3-13 | DMN3731UFB4-7B | DMN4008LFG-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Rds On (Max) @ Id, Vgs | 12mOhm @ 14A, 10V | 15mOhm @ 14A, 10V | 460mOhm @ 200mA, 4.5V | 7.5mOhm @ 10A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | PowerDI3333-8 | TO-252-3 | X2-DFN1006-3 | PowerDI3333-8 |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | 42 nC @ 10 V | 5.5 nC @ 4.5 V | 74 nC @ 10 V |
Basis Produktnummer | DMN4010 | DMN4015 | DMN3731 | DMN4008 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.5A (Ta) | 13.5A (Ta) | 1.2A (Ta) | 14.4A (Ta) |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 950mV @ 250µA | 3V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 30 V | 40 V |
FET Feature | - | - | - | - |
Package / Case | 8-PowerVDFN | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3-XFDFN | 8-PowerVDFN |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 1810 pF @ 20 V | 2072 pF @ 20 V | 73 pF @ 25 V | 3537 pF @ 20 V |
Vgs (Max) | ±20V | ±20V | ±8V | ±20V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 1.8V, 4.5V | 3.3V, 10V |
Power Dissipation (Max) | 930mW (Ta) | 2.19W (Ta) | 520mW (Ta) | 1W (Ta) |
Eroflueden DMN4010LFG-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN4010LFG-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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