DMN32D4SDW-7 Tech Spezifikatioune
Diodes Incorporated - DMN32D4SDW-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN32D4SDW-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 1.6V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-363 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 250mA, 10V | |
| Power - Max | 290mW | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.3nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 650mA | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | DMN32 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN32D4SDW-7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | DMN32D4SDW-7 | DMN33D8LDW-7 | DMN32D2LV-7 | DMN3401LDW-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Power - Max | 290mW | 350mW | 400mW | 290mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 1.3nC @ 10V | 1.23nC @ 10V | - | 1.2nC @ 10V |
| Serie | - | - | - | - |
| Vgs (th) (Max) @ Id | 1.6V @ 250µA | 1.5V @ 100µA | 1.2V @ 250µA | 1.6V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 15V | 48pF @ 5V | 39pF @ 3V | 50pF @ 15V |
| Supplier Device Package | SOT-363 | SOT-363 | SOT-563 | SOT-363 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | DMN32 | DMN33 | DMN32 | DMN3401 |
| FET Feature | - | - | Logic Level Gate | - |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | SOT-563, SOT-666 | 6-TSSOP, SC-88, SOT-363 |
| Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 650mA | 250mA | 400mA | 800mA (Ta) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 250mA, 10V | 2.4Ohm @ 250mA, 10V | 1.2Ohm @ 100mA, 4V | 400mOhm @ 590mA, 10V |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
Eroflueden DMN32D4SDW-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN32D4SDW-7 - Diodes Incorporated.
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DMN3300U-7Diodes IncorporatedMOSFET N-CH 30V 2A SOT23-3DMN32D2LFB4-7-55Diodes IncorporatedDMN33D8LV-13Diodes IncorporatedDMN32D2LV-7 MOSDiodes IncorporatedDMN32D2LFB4-7BDiodes IncorporatedDMN33D8LDW-7Diodes IncorporatedMOSFET 2N-CH 30V 0.25ADMN32D2LFB4-7-01Diodes IncorporatedDMN3300U-7 MOSDiodes IncorporatedDMN32D2LFB4-7B-55Diodes IncorporatedDMN32D2LV-7Diodes IncorporatedMOSFET 2N-CH 30V 0.4A SOT-563DMN33D8L-7Diodes IncorporatedDMN3401LDW-7Diodes IncorporatedMOSFET BVDSS: 25V-30V SOT363| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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