DMN3016LDN-7 Tech Spezifikatioune
Diodes Incorporated - DMN3016LDN-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN3016LDN-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | V-DFN3030-8 (Type J) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 11A, 10V | |
| Power - Max | 1.1W | |
| Package / Case | 8-PowerWDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1415pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 25.1nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.3A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | DMN3016 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN3016LDN-7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | DMN3016LDN-7 | DMN3015LSD-13 | DMN3012LEG-13 | DMN3012LFG-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Basis Produktnummer | DMN3016 | DMN3015 | DMN3012 | DMN3012 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate | - | - | - |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 11A, 10V | 15mOhm @ 12A, 10V | 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V | 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V |
| Power - Max | 1.1W | 1.2W | 2.2W (Tc) | 2.2W |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2.5V @ 250µA | 2.1V @ 250µA, 1.15V @ 250µA | 2.1V @ 250µA, 1.15V @ 250µA |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 1415pF @ 15V | 1415pF @ 15V | 850pF @ 15V, 1480pF @ 15V | 850pF @ 15V, 1480pF @ 15V |
| Package / Case | 8-PowerWDFN | 8-SOIC (0.154", 3.90mm Width) | 8-PowerLDFN | 8-PowerLDFN |
| Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.3A | 8.4A (Ta) | 10A (Ta), 20A (Tc) | 20A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 25.1nC @ 10V | 25.1nC @ 10V | 6.1nC @ 4.5V, 12.6nC @ 4.5V | 6.1nC @ 4.5V, 12.6nC @ 4.5V |
| Supplier Device Package | V-DFN3030-8 (Type J) | 8-SO | PowerDI3333-8 (Type D) | PowerDI3333-8 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden DMN3016LDN-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN3016LDN-7 - Diodes Incorporated.
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DMN3016LK3-13Diodes IncorporatedMOSFET N-CH 30V 12.4A TO252DMN3012LEG-13Diodes IncorporatedMOSFET BVDSS: 25V-30V POWERDI333DMN3016LFDE-7 MOSCCSEMIDMN3016LFDE-7Diodes IncorporatedMOSFET N-CH 30V 10A 6UDFNDMN3012LEG-13-55Diodes IncorporatedDMN3012LFG-7Diodes IncorporatedMOSFET 2 N-CH 30V POWERDI3333DMN3016LFDiodes IncorporatedDMN3016LDNDiodes Incorporated| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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