DMN2400UFB-7 Tech Spezifikatioune
Diodes Incorporated - DMN2400UFB-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN2400UFB-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 900mV @ 250µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | X1-DFN1006-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 550mOhm @ 600mA, 4.5V | |
Power Dissipation (Max) | 470mW (Ta) | |
Package / Case | 3-UFDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 16 V | |
Gate Charge (Qg) (Max) @ Vgs | 0.5 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 750mA (Ta) | |
Basis Produktnummer | DMN2400 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN2400UFB-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN2400UFB-7 | DMN2300UFD-7 | DMN2320UFB4-7B | DMN2400UFDQ-13 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Package / Case | 3-UFDFN | 3-UDFN | 3-XFDFN | 3-PowerUDFN |
Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 16 V | 67.62 pF @ 25 V | 71 pF @ 10 V | 37 pF @ 16 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 750mA (Ta) | 1.21A (Ta) | 1A (Ta) | 900mA (Ta) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 0.5 nC @ 4.5 V | 2 nC @ 4.5 V | 0.89 nC @ 4.5 V | 0.5 nC @ 4.5 V |
Supplier Device Package | X1-DFN1006-3 | X1-DFN1212-3 | X2-DFN1006-3 | U-DFN1212-3 (Type C) |
Serie | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.5V, 4.5V | 1.8V, 4.5V | 1.5V, 4.5V |
Vgs (th) (Max) @ Id | 900mV @ 250µA | 950mV @ 250µA | 950mV @ 250µA | 1V @ 250µA |
Vgs (Max) | ±12V | ±8V | ±8V | ±12V |
Power Dissipation (Max) | 470mW (Ta) | 470mW (Ta) | 520mW (Ta) | 400mW (Ta) |
Rds On (Max) @ Id, Vgs | 550mOhm @ 600mA, 4.5V | 200mOhm @ 900mA, 4.5V | 320mOhm @ 500mA, 4.5V | 600mOhm @ 200mA, 4.5V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | DMN2400 | DMN2300 | DMN2320 | DMN2400 |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Eroflueden DMN2400UFB-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN2400UFB-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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