DMN21D2UFB-7 Tech Spezifikatioune
Diodes Incorporated - DMN21D2UFB-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN21D2UFB-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | X1-DFN1006-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 990mOhm @ 100mA, 4.5V | |
Power Dissipation (Max) | 380mW (Ta) | |
Package / Case | 3-UFDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 27.6 pF @ 16 V | |
Gate Charge (Qg) (Max) @ Vgs | 0.93 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 760mA (Ta) | |
Basis Produktnummer | DMN21 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN21D2UFB-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN21D2UFB-7 | DMN2170U-7 | DMN2104L-7 | DMN2230U-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1.4V @ 250µA | 1V @ 250µA |
Vgs (Max) | ±12V | ±12V | ±12V | ±12V |
Basis Produktnummer | DMN21 | DMN2170 | DMN2104 | DMN2230 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 990mOhm @ 100mA, 4.5V | 70mOhm @ 3A, 4.5V | 53mOhm @ 4.2A, 4.5V | 110mOhm @ 2.5A, 4.5V |
Power Dissipation (Max) | 380mW (Ta) | 600mW (Ta) | 1.4W (Ta) | 600mW (Ta) |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 1.5V, 4.5V | 2.5V, 4.5V | 1.8V, 4.5V |
Serie | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 760mA (Ta) | 2.3A (Ta) | 4.3A (Ta) | 2A (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
FET Feature | - | - | - | - |
Supplier Device Package | X1-DFN1006-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Input Capacitance (Ciss) (Max) @ Vds | 27.6 pF @ 16 V | 217 pF @ 10 V | 325 pF @ 10 V | 188 pF @ 10 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | 3-UFDFN | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Gate Charge (Qg) (Max) @ Vgs | 0.93 nC @ 10 V | - | - | - |
Eroflueden DMN21D2UFB-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN21D2UFB-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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