DMN2065UW-7 Tech Spezifikatioune
Diodes Incorporated - DMN2065UW-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN2065UW-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-323 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 2A, 4.5V | |
| Power Dissipation (Max) | 430mW (Ta) | |
| Package / Case | SC-70, SOT-323 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.8A (Ta) | |
| Basis Produktnummer | DMN2065 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN2065UW-7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | DMN2065UW-7 | DMN2050LQ-7 | DMN2065UWQ-7 | DMN2100UDM-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Package / Case | SC-70, SOT-323 | TO-236-3, SC-59, SOT-23-3 | SC-70, SOT-323 | SOT-23-6 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power Dissipation (Max) | 430mW (Ta) | 1.4W | 700mW (Ta) | 1W (Ta) |
| Serie | - | Automotive, AEC-Q101 | - | - |
| Basis Produktnummer | DMN2065 | DMN2050 | DMN2065 | DMN2100 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.8A (Ta) | 5.9A (Ta) | 3.1A (Ta) | 3.3A (Ta) |
| Vgs (Max) | ±12V | ±12V | ±12V | ±8V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 2A, 4.5V | 29mOhm @ 5A, 4.5V | 56mOhm @ 2A, 4.5V | 55mOhm @ 6A, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 10 V | 532 pF @ 10 V | 400 pF @ 10 V | 555 pF @ 10 V |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1.4V @ 250µA | 1V @ 250µA | 1V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 2V, 4.5V | 1.5V, 4.5V | 1.5V, 4.5V |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
| Supplier Device Package | SOT-323 | SOT-23-3 | SOT-323 | SOT-26 |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 4.5 V | 6.7 nC @ 4.5 V | 5.4 nC @ 4.5 V | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden DMN2065UW-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN2065UW-7 - Diodes Incorporated.
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DMN2075UDW-7Diodes IncorporatedMOSFET N-CH 20V 2.8A SOT363DMN2065UWDiodes IncorporatedDMN2058UW-7Diodes IncorporatedMOSFET N-CH 20V 3.5A SOT323DMN2075U-7Diodes IncorporatedMOSFET N-CH 20V 4.2A SOT23-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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