DMN2024U-7 Tech Spezifikatioune
Diodes Incorporated - DMN2024U-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN2024U-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 900mV @ 250µA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 25mOhm @ 6.5A, 4.5V | |
Power Dissipation (Max) | 800mW | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 647 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.8A (Ta) | |
Basis Produktnummer | DMN2024 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN2024U-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN2024U-7 | DMN2022UFDF-7 | DMN2026UVT-7 | DMN2025UFDF-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.8A (Ta) | 7.9A (Ta) | 6.2A (Tc) | 6.5A (Ta) |
Input Capacitance (Ciss) (Max) @ Vds | 647 pF @ 10 V | 907 pF @ 10 V | 887 pF @ 10 V | 486 pF @ 10 V |
Vgs (Max) | ±10V | ±8V | ±10V | ±10V |
Basis Produktnummer | DMN2024 | DMN2022 | DMN2026 | DMN2025 |
Supplier Device Package | SOT-23-3 | U-DFN2020-6 (Type F) | TSOT-26 | U-DFN2020-6 (Type F) |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.5V, 4.5V | 2.5V, 4.5V | 1.8V, 4.5V |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 | 6-UDFN Exposed Pad | SOT-23-6 Thin, TSOT-23-6 | 6-UDFN Exposed Pad |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | - | - | - | - |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 800mW | 660mW (Ta) | 1.15W (Ta) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 25mOhm @ 6.5A, 4.5V | 22mOhm @ 4A, 4.5V | 24mOhm @ 6.2A, 4.5V | 25mOhm @ 4A, 4.5V |
Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 4.5 V | 18 nC @ 8 V | 18.4 nC @ 8 V | 12.3 nC @ 10 V |
Vgs (th) (Max) @ Id | 900mV @ 250µA | 1V @ 250µA | 1.5V @ 250µA | 1V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden DMN2024U-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN2024U-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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