DMN2012UCA6-7 Tech Spezifikatioune
Diodes Incorporated - DMN2012UCA6-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN2012UCA6-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 1.3V @ 1mA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | X3-DSN2718-6 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 5A, 4.5V | |
Power - Max | 820mW | |
Package / Case | 6-SMD, No Lead | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2417pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4V | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 24V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Ta) | |
Konfiguratioun | 2 N-Channel (Dual) Common Drain | |
Basis Produktnummer | DMN2012 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN2012UCA6-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN2012UCA6-7 | DMN2016LFG-7 | DMN2008LFU-7 | DMN2011UFX-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Serie | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Ta) | 5.2A | 14.5A | 12.2A (Ta) |
Supplier Device Package | X3-DSN2718-6 | U-DFN3030-8 | U-DFN2030-6 (Type B) | V-DFN2050-4 |
Entworf fir Source Voltage (Vdss) | 24V | 20V | 20V | 20V |
Rds On (Max) @ Id, Vgs | 9mOhm @ 5A, 4.5V | 18mOhm @ 6A, 4.5V | 5.4mOhm @ 5.5A, 4.5V | 9.5mOhm @ 10A, 4.5V |
FET Feature | - | Logic Level Gate | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4V | 16nC @ 4.5V | 42.3nC @ 10V | 56nC @ 10V |
Basis Produktnummer | DMN2012 | DMN2016 | DMN2008 | DMN2011 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power - Max | 820mW | 770mW | 1W | 2.1W |
Vgs (th) (Max) @ Id | 1.3V @ 1mA | 1.1V @ 250µA | 1.5V @ 250A | 1V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 2417pF @ 10V | 1472pF @ 10V | 1418pF @ 10V | 2248pF @ 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Konfiguratioun | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) Common Drain |
Package / Case | 6-SMD, No Lead | 8-PowerUDFN | 6-UFDFN Exposed Pad | 4-VFDFN Exposed Pad |
Eroflueden DMN2012UCA6-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN2012UCA6-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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