DMN1150UFB-7B Tech Spezifikatioune
Diodes Incorporated - DMN1150UFB-7B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN1150UFB-7B
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±6V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | X1-DFN1006-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 150mOhm @ 1A, 4.5V | |
Power Dissipation (Max) | 500mW (Ta) | |
Package / Case | 3-UFDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 106 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 12 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.41A (Ta) | |
Basis Produktnummer | DMN1150 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN1150UFB-7B | DMN13H750S-7 | DMN10H220LQ-7 | DMN10H220LVT-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Input Capacitance (Ciss) (Max) @ Vds | 106 pF @ 10 V | 231 pF @ 25 V | 401 pF @ 25 V | 401 pF @ 25 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4.5 V | 5.6 nC @ 10 V | 8.3 nC @ 10 V | 8.3 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 150mOhm @ 1A, 4.5V | 750mOhm @ 2A, 10V | 220mOhm @ 1.6A, 10V | 220mOhm @ 1.6A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 6V, 10V | 4.5V, 10V | 4.5V, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.41A (Ta) | 1A (Ta) | 1.6A (Ta) | 1.87A (Ta) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 12 V | 130 V | 100 V | 100 V |
Package / Case | 3-UFDFN | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | SOT-23-6 Thin, TSOT-23-6 |
Power Dissipation (Max) | 500mW (Ta) | 770mW (Ta) | 1.3W (Ta) | 1.67W (Ta) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | DMN1150 | DMN13 | DMN10 | DMN10 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | - | - | - | - |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 1V @ 250µA | 4V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
Supplier Device Package | X1-DFN1006-3 | SOT-23-3 | SOT-23-3 | TSOT-26 |
Vgs (Max) | ±6V | ±20V | ±16V | ±16V |
Eroflueden DMN1150UFB-7B PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN1150UFB-7B - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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