DMN10H099SFG-7 Tech Spezifikatioune
Diodes Incorporated - DMN10H099SFG-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN10H099SFG-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerDI3333-8 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 80mOhm @ 3.3A, 10V | |
Power Dissipation (Max) | 980mW (Ta) | |
Package / Case | 8-PowerVDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1172 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 25.2 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.2A (Ta) | |
Basis Produktnummer | DMN10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN10H099SFG-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN10H099SFG-7 | DMN10H099SK3-13 | DMN10H099SFG-13 | DMN10H120SFG-13 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
FET Feature | - | - | - | - |
Serie | - | - | - | - |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 1172 pF @ 50 V | 1172 pF @ 50 V | 1172 pF @ 50 V | 549 pF @ 50 V |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.2A (Ta) | 17A (Tc) | 4.2A (Ta) | 3.8A (Ta) |
Basis Produktnummer | DMN10 | DMN10 | DMN10 | DMN10 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 80mOhm @ 3.3A, 10V | 80mOhm @ 3.3A, 10V | 80mOhm @ 3.3A, 10V | 110mOhm @ 3.3A, 10V |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 25.2 nC @ 10 V | 25.2 nC @ 10 V | 25.2 nC @ 10 V | 10.6 nC @ 10 V |
Supplier Device Package | PowerDI3333-8 | TO-252-3 | PowerDI3333-8 | POWERDI3333-8 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | 8-PowerVDFN | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8-PowerVDFN | 8-PowerVDFN |
Power Dissipation (Max) | 980mW (Ta) | 34W (Tc) | 980mW (Ta) | 1W (Ta) |
Eroflueden DMN10H099SFG-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN10H099SFG-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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