DMG6602SVTQ-7 Tech Spezifikatioune
Diodes Incorporated - DMG6602SVTQ-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMG6602SVTQ-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 2.3V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TSOT-26 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.1A, 10V | |
| Power - Max | 840mW | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.4A, 2.8A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | DMG6602 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMG6602SVTQ-7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | DMG6602SVTQ-7 | DMG6602SVT-7 | DMG6898LSD-13 | DMG6601LVT-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | 8-SOIC (0.154", 3.90mm Width) | SOT-23-6 Thin, TSOT-23-6 |
| Power - Max | 840mW | 840mW | 1.28W | 850mW |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.4A, 2.8A | 3.4A, 2.8A | 9.5A | 3.8A, 2.5A |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V | 13nC @ 10V | 26nC @ 10V | 12.3nC @ 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.1A, 10V | 60mOhm @ 3.1A, 10V | 16mOhm @ 9.4A, 4.5V | 55mOhm @ 3.4A, 10V |
| Vgs (th) (Max) @ Id | 2.3V @ 250µA | 2.3V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Supplier Device Package | TSOT-26 | TSOT-26 | 8-SO | TSOT-26 |
| FET Feature | - | Logic Level Gate, 4.5V Drive | Logic Level Gate | Logic Level Gate |
| Konfiguratioun | N and P-Channel | N and P-Channel | 2 N-Channel (Dual) | N and P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V | 400pF @ 15V | 1149pF @ 10V | 422pF @ 15V |
| Serie | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 30V | 30V | 20V | 30V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | DMG6602 | DMG6602 | DMG6898 | DMG6601 |
Eroflueden DMG6602SVTQ-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMG6602SVTQ-7 - Diodes Incorporated.
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DMG6968UDM-7Diodes IncorporatedMOSFET 2N-CH 20V 6.5A SOT-26DMG6968U-7-FDiodes Incorporated| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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