DMG5802LFX-7 Tech Spezifikatioune
Diodes Incorporated - DMG5802LFX-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMG5802LFX-7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | W-DFN5020-6 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 15mOhm @ 6.5A, 4.5V | |
Power - Max | 980mW | |
Package / Case | 6-VFDFN Exposed Pad | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1066.4pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 31.3nC @ 10V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 24V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A | |
Konfiguratioun | 2 N-Channel (Dual) Common Drain | |
Basis Produktnummer | DMG5802 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMG5802LFX-7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMG5802LFX-7 | DMG4932LSD-13 | DMG6301UDW-7 | DMG6301UDW-13 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Entworf fir Source Voltage (Vdss) | 24V | 30V | 25V | 25V |
Power - Max | 980mW | 1.19W | 300mW | 300mW |
Basis Produktnummer | DMG5802 | DMG4932LSD | DMG6301 | DMG6301 |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 2.4V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Konfiguratioun | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 31.3nC @ 10V | 42nC @ 10V | 0.36nC @ 4.5V | 0.36nC @ 4.5V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | 6-VFDFN Exposed Pad | 8-SOIC (0.154", 3.90mm Width) | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A | 9.5A | 240mA | 240mA |
Input Capacitance (Ciss) (Max) @ Vds | 1066.4pF @ 15V | 1932pF @ 15V | 27.9pF @ 10V | 27.9pF @ 10V |
Supplier Device Package | W-DFN5020-6 | 8-SO | SOT-363 | SOT-363 |
Serie | - | - | - | - |
FET Feature | Logic Level Gate | Logic Level Gate | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 15mOhm @ 6.5A, 4.5V | 15mOhm @ 9A, 10V | 4Ohm @ 400mA, 4.5V | 4Ohm @ 400mA, 4.5V |
Eroflueden DMG5802LFX-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMG5802LFX-7 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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