DMG1026UV-7 Tech Spezifikatioune
Diodes Incorporated - DMG1026UV-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMG1026UV-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 1.8V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-563 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 500mA, 10V | |
| Power - Max | 580mW | |
| Package / Case | SOT-563, SOT-666 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 32pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.45nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 60V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 410mA | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | DMG1026 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMG1026UV-7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | DMG1026UV-7 | DMG1023UVQ-13 | DMG1016V-7 | DMG1024UV-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 410mA | 1.03A (Ta) | 870mA, 640mA | 1.38A |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | - | Automotive, AEC-Q101 | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Entworf fir Source Voltage (Vdss) | 60V | 20V | 20V | 20V |
| Konfiguratioun | 2 N-Channel (Dual) | 2 P-Channel (Dual) | N and P-Channel | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate | - | Logic Level Gate | Logic Level Gate |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 500mA, 10V | 750mOhm @ 430mA, 4.5V | 400mOhm @ 600mA, 4.5V | 450mOhm @ 600mA, 4.5V |
| Vgs (th) (Max) @ Id | 1.8V @ 250µA | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 32pF @ 25V | 59pF @ 16V | 60.67pF @ 16V | 60.67pF @ 16V |
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Gate Charge (Qg) (Max) @ Vgs | 0.45nC @ 10V | 0.622nC @ 4.5V | 0.74nC @ 4.5V | 0.74nC @ 4.5V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power - Max | 580mW | 530mW (Ta) | 530mW | 530mW |
| Basis Produktnummer | DMG1026 | DMG1023 | DMG1016 | DMG1024 |
| Supplier Device Package | SOT-563 | SOT-563 | SOT-563 | SOT-563 |
Eroflueden DMG1026UV-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMG1026UV-7 - Diodes Incorporated.
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DMG1016UDWQ-7Diodes IncorporatedMOSFET BVDSS: 8V~24V SOT363 T&R| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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