DMC62D0SVQ-7 Tech Spezifikatioune
Diodes Incorporated - DMC62D0SVQ-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMC62D0SVQ-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-563 | |
| Serie | Automotive, AEC-Q101 | |
| Rds On (Max) @ Id, Vgs | 1.7Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V | |
| Power - Max | 510mW (Ta) | |
| Package / Case | SOT-563, SOT-666 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 25V, 26pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V, 0.3nC @ 4.5V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 60V, 50V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 571mA (Ta), 304mA (Ta) | |
| Konfiguratioun | N and P-Channel Complementary | |
| Basis Produktnummer | DMC62 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMC62D0SVQ-7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | DMC62D0SVQ-7 | DMC6040SSD-13 | DMC6040SSDQ-13 | DMC6040SSD-13 MOS |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Serie | Automotive, AEC-Q101 | - | Automotive, AEC-Q101 | - |
| Konfiguratioun | N and P-Channel Complementary | N and P-Channel | N and P-Channel Complementary | - |
| Package / Case | SOT-563, SOT-666 | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - |
| Basis Produktnummer | DMC62 | DMC6040 | DMC6040 | - |
| Rds On (Max) @ Id, Vgs | 1.7Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V | 40mOhm @ 8A, 10V | 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V, 0.3nC @ 4.5V | 20.8nC @ 10V | 20.8nC @ 10V, 19.4nC @ 10V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 25V, 26pF @ 25V | 1130pF @ 15V | 1130pF @ 15V, 1030pF @ 30V | - |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 3V @ 250µA | 3V @ 250µA | - |
| Supplier Device Package | SOT-563 | 8-SO | 8-SO | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 571mA (Ta), 304mA (Ta) | 5.1A, 3.1A | 5.1A (Ta) | - |
| FET Feature | - | Logic Level Gate | - | - |
| Entworf fir Source Voltage (Vdss) | 60V, 50V | 60V | 60V | - |
| Power - Max | 510mW (Ta) | 1.24W | 1.24W | - |
Eroflueden DMC62D0SVQ-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMC62D0SVQ-7 - Diodes Incorporated.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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