DDTC115GE-7-F Tech Spezifikatioune
Diodes Incorporated - DDTC115GE-7-F technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DDTC115GE-7-F
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | |
Transistor Type | NPN - Pre-Biased | |
Supplier Device Package | SOT-523 | |
Serie | - | |
Resistor - Emitterbasis (R2) | 100 kOhms | |
Power - Max | 150mW | |
Verpakung | Tape & Reel (TR) | |
Package / Case | SOT-523 |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Aner Names | DDTC115GE-FDITR | |
Mounting Type | Surface Mount | |
Feuchtigkeit Sensibilitéitniveau (MSL) | 1 (Unlimited) | |
Bleif Free Status / RoHS Status | Lead free / RoHS Compliant | |
Frequenz - Iwwergang | 250MHz | |
Detailbeschreiwung | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount SOT-523 | |
DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V | |
Aktuell - Kollektorat Cutoff (Max) | 500nA (ICBO) | |
Aktuell - Sammler (Ic) (Max) | 100mA | |
Basiszuel Nummer | DDTC115 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | Bleif gratis / RoHS kompatibel |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DDTC115GE-7-F.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DDTC115GE-7-F | DDTC115EUA-7-F | DDTC115EUA-7 | DDTC115EUAQ-7-F |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Aner Names | DDTC115GE-FDITR | - | - | - |
Frequenz - Iwwergang | 250MHz | 250 MHz | 250 MHz | 250 MHz |
Aktuell - Kollektorat Cutoff (Max) | 500nA (ICBO) | 500nA | 500nA | 500nA |
Verpakung | Tape & Reel (TR) | - | - | - |
Feuchtigkeit Sensibilitéitniveau (MSL) | 1 (Unlimited) | - | - | - |
Supplier Device Package | SOT-523 | SOT-323 | SOT-323 | SOT-323 |
DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V | 82 @ 5mA, 5V | 82 @ 5mA, 5V | 82 @ 5mA, 5V |
Detailbeschreiwung | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount SOT-523 | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | 300mV @ 250µA, 5mA | 300mV @ 250µA, 5mA | 300mV @ 250µA, 5mA |
Transistor Type | NPN - Pre-Biased | NPN - Pre-Biased | NPN - Pre-Biased | NPN - Pre-Biased |
Basiszuel Nummer | DDTC115 | - | - | - |
Bleif Free Status / RoHS Status | Lead free / RoHS Compliant | - | - | - |
Voltage - Collector Emitter Breakdown (Max) | 50V | 50 V | 50 V | 50 V |
Package / Case | SOT-523 | SC-70, SOT-323 | SC-70, SOT-323 | SC-70, SOT-323 |
Serie | - | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
Aktuell - Sammler (Ic) (Max) | 100mA | 100 mA | 100 mA | 100 mA |
Power - Max | 150mW | 200 mW | 200 mW | 200 mW |
Resistor - Emitterbasis (R2) | 100 kOhms | 100 kOhms | 100 kOhms | 100 kOhms |
Eroflueden DDTC115GE-7-F PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DDTC115GE-7-F - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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