BSS8402DWQ-7 Tech Spezifikatioune
Diodes Incorporated - BSS8402DWQ-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - BSS8402DWQ-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-363 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 13.5Ohm @ 500mA, 10V | |
| Power - Max | 200mW | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 60V, 50V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 115mA, 130mA | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | BSS8402 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated BSS8402DWQ-7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSS8402DWQ-7 | BSS8402DW-7-F | BSS8402DW-7 | BSS8402DW-7-G |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Basis Produktnummer | BSS8402 | BSS8402 | BSS8402 | - |
| Supplier Device Package | SOT-363 | SOT-363 | SOT-363 | SOT-363 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Entworf fir Source Voltage (Vdss) | 60V, 50V | 60V, 50V | 60V, 50V | 60V, 50V |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Standard |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
| Rds On (Max) @ Id, Vgs | 13.5Ohm @ 500mA, 10V | 7.5Ohm @ 50mA, 5V | 7.5Ohm @ 50mA, 5V | 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Power - Max | 200mW | 200mW | 200mW | 200mW (Ta) |
| Serie | - | - | - | - |
| Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | - |
| Gate Charge (Qg) (Max) @ Vgs | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | 50pF @ 25V | 50pF @ 25V | 50pF @ 25V, 45pF @ 25V |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA, 2V @ 1mA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 115mA, 130mA | 115mA, 130mA | 115mA, 130mA | 115mA (Ta), 130mA (Ta) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden BSS8402DWQ-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir BSS8402DWQ-7 - Diodes Incorporated.
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BSS84AHZGT116Rohm SemiconductorPCH -60V -0.23A, SOT-23, SMALL SBSS8420DW-7-FDiodes IncorporatedBSS8402DW-7-GDiodes IncorporatedMOSFET N/P-CH 60V/50V SC70-6
BSS84-TPMicro Commercial CoMOSFET P-CH 50V 130MA SOT23BSS84215Freescale / NXP SemiconductorsBSS84AK+215Freescale / NXP Semiconductors| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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