BSS123-7-F Tech Spezifikatioune
Diodes Incorporated - BSS123-7-F technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - BSS123-7-F
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 2V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V | |
Power Dissipation (Max) | 300mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 170mA (Ta) | |
Basis Produktnummer | BSS123 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated BSS123-7-F.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BSS123-7-F | BSS123LT1G | BSS123 | BSS123 |
Hiersteller | Diodes Incorporated | onsemi | Fairchild Semiconductor | Yangjie Technology |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V | 20 pF @ 25 V | 73 pF @ 25 V | 60 pF @ 25 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V | 6Ohm @ 100mA, 10V | 6Ohm @ 170mA, 10V | 6Ohm @ 170mA, 10V |
Vgs (th) (Max) @ Id | 2V @ 1mA | 2.6V @ 1mA | 2V @ 1mA | 2.8V @ 250µA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 170mA (Ta) | 170mA (Ta) | 170mA (Ta) | 170mA |
Basis Produktnummer | BSS123 | BSS123 | - | - |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 300mW (Ta) | 225mW (Ta) | 360mW (Ta) | 350mW |
Supplier Device Package | SOT-23-3 | SOT-23-3 (TO-236) | SOT-23-3 | SOT-23 |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V | 4.5V, 10V |
Serie | - | - | - | - |
Eroflueden BSS123-7-F PDF DataDhusts an Diodes Incorporated Dokumentatioun fir BSS123-7-F - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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