BC858AW-7-F Tech Spezifikatioune
Diodes Incorporated - BC858AW-7-F technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - BC858AW-7-F
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | |
| Transistor Type | PNP | |
| Supplier Device Package | SOT-323 | |
| Serie | - | |
| Power - Max | 200 mW | |
| Package / Case | SC-70, SOT-323 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 200MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V | |
| Aktuell - Kollektorat Cutoff (Max) | 15nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 100 mA | |
| Basis Produktnummer | BC858 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated BC858AW-7-F.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | BC858AW-7-F | BC858ALT1G | BC858B,215 | BC858AE6327 |
| Hiersteller | Diodes Incorporated | onsemi | Nexperia USA Inc. | Infineon Technologies |
| Basis Produktnummer | BC858 | BC858 | BC858 | - |
| Frequenz - Iwwergang | 200MHz | 100MHz | 100MHz | 250MHz |
| Serie | - | - | Automotive, AEC-Q101 | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
| Supplier Device Package | SOT-323 | SOT-23-3 (TO-236) | TO-236AB | PG-SOT23 |
| Aktuell - Sammler (Ic) (Max) | 100 mA | 100 mA | 100 mA | 100 mA |
| Power - Max | 200 mW | 300 mW | 250 mW | 330 mW |
| Package / Case | SC-70, SOT-323 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | 30 V | 30 V | 30 V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | 650mV @ 5mA, 100mA | 650mV @ 5mA, 100mA | 650mV @ 5mA, 100mA |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Aktuell - Kollektorat Cutoff (Max) | 15nA (ICBO) | 15nA (ICBO) | 15nA (ICBO) | 15nA (ICBO) |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V | 125 @ 2mA, 5V | 220 @ 2mA, 5V | 125 @ 2mA, 5V |
| Transistor Type | PNP | PNP | PNP | PNP |
Eroflueden BC858AW-7-F PDF DataDhusts an Diodes Incorporated Dokumentatioun fir BC858AW-7-F - Diodes Incorporated.
BC858ALT1GonsemiTRANS PNP 30V 0.1A SOT23-3BC858B,215Nexperia USA Inc.TRANS PNP 30V 0.1A TO236ABBC858AE6327Infineon TechnologiesTRANS PNP 30V 0.1A SOT23
BC858AE6327HTSA1Infineon TechnologiesTRANS PNP 30V 0.1A SOT-23BC858BDiotec SemiconductorBJT SOT-23 30V 100MABC858BInfineon TechnologiesTRANS PNP 30V 0.1A SOT23-3
BC858B T/RPANJITBC858B E6327Cypress Semiconductor (Infineon Technologies)BC858ALT1onsemiTRANS PNP 30V 0.1A SOT23-3BC858AWDiotec SemiconductorTRANS PNP 30V 0.1A SOT323BC858AW E6327Cypress Semiconductor (Infineon Technologies)BC858B 220-475Cj
BC858BTaiwan Semiconductor CorporationSOT-23, -30V, -0.1A, PNP BIPOLARBC858AWYangjie TechnologySOT-323 PNP 0.2W -0.1A -30V Tra
BC858AMTFFairchild SemiconductorTRANS PNP 30V 0.1A SOT23-3BC858AMTFonsemiTRANS PNP 30V 0.1A SOT23-3BC858B 3KSHIKUES
BC858BYangjie TechnologySOT-23 PNP 0.2W -0.1A -30V Trans| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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