BAV5005LP-7B Tech Spezifikatioune
Diodes Incorporated - BAV5005LP-7B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - BAV5005LP-7B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 200 mA | |
| Voltage - DC Reverse (Vr) (Max) | 400 V | |
| Technologie | Standard | |
| Supplier Device Package | X1-DFN1006-2 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | 0402 (1006 Metric) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 1 µA @ 240 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 300mA | |
| Capacitance @ Vr, F. | 0.9pF @ 0V, 1MHz | |
| Basis Produktnummer | BAV5005 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated BAV5005LP-7B.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | BAV5005LP-7B | BAV5004WS-7 | BAV302-TR | BAV5004W-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Vishay General Semiconductor - Diodes Division | Diodes Incorporated |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 350 V | 150 V | 350 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 200 mA | 1.29 V @ 200 mA | 1 V @ 100 mA | 1.29 V @ 200 mA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 300mA | 300mA | 250mA | 300mA |
| Technologie | Standard | Standard | Standard | Standard |
| Capacitance @ Vr, F. | 0.9pF @ 0V, 1MHz | 2.5pF @ 0V, 1MHz | 1.5pF @ 0V, 1MHz | 0.9pF @ 0V, 1MHz |
| Basis Produktnummer | BAV5005 | BAV5004 | BAV302 | BAV5004 |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | 175°C (Max) | -55°C ~ 150°C |
| Aktuell - Reverse Leakage @ Vr | 1 µA @ 240 V | 1 µA @ 240 V | 100 nA @ 150 V | 1 µA @ 240 V |
| Package / Case | 0402 (1006 Metric) | SC-76, SOD-323 | 2-SMD, No Lead | SOD-123 |
| Supplier Device Package | X1-DFN1006-2 | SOD-323 | MicroMELF | SOD-123 |
| Serie | - | Automotive, AEC-Q101 | Automotive, AEC-Q101 | - |
Eroflueden BAV5005LP-7B PDF DataDhusts an Diodes Incorporated Dokumentatioun fir BAV5005LP-7B - Diodes Incorporated.
BAV5004WS-7Diodes IncorporatedDIODE GEN PURP 350V 300MA SOD323BAV302-TRVishay General Semiconductor - Diodes DivisionDIODE GP 150V 250MA MICROMELF
BAV303_R1_10001PANJITBAV70 A4BAV316WS R1PANJITBAV5004W-7Diodes IncorporatedDIODE GEN PURP 350V 300MA SOD123BAV303-TRVishay General Semiconductor - Diodes DivisionDIODE GP 200V 250MA MICROMELFBAV70 AVCJBAV70 T/RPANJITBAV70 A4/SOT23YMS
BAV70 E8000Cypress Semiconductor (Infineon Technologies)BAV316WSPANJITBAV70 E6327Cypress Semiconductor (Infineon Technologies)
BAV70 A4WFreescale / NXP SemiconductorsBAV316BAV301-TRVishay General Semiconductor - Diodes DivisionDIODE GP 100V 250MA MICROMELFBAV70 HA4FOSHANBAV70| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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