B170AE-13 Tech Spezifikatioune
Diodes Incorporated - B170AE-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - B170AE-13
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Viru (Vf) (Max) @ Wann | 790 mV @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 70 V | |
| Technologie | Schottky | |
| Supplier Device Package | SMA | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-214AC, SMA |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 200 µA @ 70 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 27pF @ 4V, 1MHz | |
| Basis Produktnummer | B170 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated B170AE-13.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | B170AE-13 | RFV8BM6STL | SDUR30Q60W | B170-13-F |
| Hiersteller | Diodes Incorporated | Rohm Semiconductor | SMC Diode Solutions | Diodes Incorporated |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
| Aktuell - Reverse Leakage @ Vr | 200 µA @ 70 V | 10 µA @ 600 V | 10 µA @ 600 V | 500 µA @ 70 V |
| Serie | - | - | - | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 8A | 30A | 1A |
| Package / Case | DO-214AC, SMA | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-247-2 | DO-214AC, SMA |
| Supplier Device Package | SMA | TO-252 | TO-247AC | SMA |
| Basis Produktnummer | B170 | RFV8BM6 | SDUR30 | B170 |
| Voltage - DC Reverse (Vr) (Max) | 70 V | 600 V | 600 V | 70 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | 150°C (Max) | -55°C ~ 150°C | -65°C ~ 150°C |
| Technologie | Schottky | Standard | Standard | Schottky |
| Voltage - Viru (Vf) (Max) @ Wann | 790 mV @ 1 A | 2.8 V @ 8 A | 1.8 V @ 30 A | 790 mV @ 1 A |
| Capacitance @ Vr, F. | 27pF @ 4V, 1MHz | - | - | 80pF @ 4V, 1MHz |
Eroflueden B170AE-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir B170AE-13 - Diodes Incorporated.
B170NF04VBsemiB17A03EMCRFV8BM6STLRohm SemiconductorDIODE GEN PURP 600V 8A TO252SDUR30Q60WSMC Diode SolutionsDIODE GEN PURP 600V 30A TO247ACB170-13-FDiodes IncorporatedDIODE SCHOTTKY 70V 1A SMA
FDH300onsemiDIODE GEN PURP 125V 200MA DO35B170Q-13-FDiodes IncorporatedDIODE SCHOTTKY 70V 1A SMAB1701TX-20P-000614Harvatek Corporation
1N4048RVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 250V 275A DO205AB
DSA1-18DIXYSDIODE AVALANCHE 1.8KV 2.3AMUR1605CTSolid State Inc.DIODE GEN PURP 50V 16A TO220
1N5400GonsemiDIODE GEN PURP 50V 3A AXIAL
R6200840XXOOPowerex Inc.DIODE GEN PURP 800V 400A DO200AAB170BE-13Diodes IncorporatedDIODE SCHOTTKY 70V 1A SMB
ES1C-E3/61TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 150V 1A DO214AC
JAN1N1184RMicrochip TechnologyDIODE GEN PURP 100V 35A DO5B170B-13-FDiodes IncorporatedDIODE SCHOTTKY 70V 1A SMBS504120Microchip TechnologyDIODE GP 1.2KV 300A DO205AB DO9| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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