2DB1188P-13 Tech Spezifikatioune
Diodes Incorporated - 2DB1188P-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - 2DB1188P-13
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Collector Emitter Breakdown (Max) | 32 V | |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A | |
| Transistor Type | PNP | |
| Supplier Device Package | SOT-89-3 | |
| Serie | - | |
| Power - Max | 1 W | |
| Package / Case | TO-243AA |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 120MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 82 @ 500mA, 3V | |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 2 A | |
| Basis Produktnummer | 2DB1188 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated 2DB1188P-13.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | 2DB1188P-13 | 2DB1182Q-13 | 2DB1188Q-13 | 2DB1188R-13 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 82 @ 500mA, 3V | 120 @ 500mA, 3V | 120 @ 500mA, 3V | 180 @ 500mA, 3V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Voltage - Collector Emitter Breakdown (Max) | 32 V | 32 V | 32 V | 32 V |
| Aktuell - Sammler (Ic) (Max) | 2 A | 2 A | 2 A | 2 A |
| Basis Produktnummer | 2DB1188 | 2DB1182 | 2DB1188 | 2DB1188 |
| Package / Case | TO-243AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-243AA | TO-243AA |
| Frequenz - Iwwergang | 120MHz | 110MHz | 120MHz | 120MHz |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | 1µA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Transistor Type | PNP | PNP | PNP | PNP |
| Power - Max | 1 W | 10 W | 1 W | 1 W |
| Serie | - | - | - | - |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A | 800mV @ 200mA, 2A | 800mV @ 200mA, 2A | 800mV @ 200mA, 2A |
| Supplier Device Package | SOT-89-3 | TO-252-3 | SOT-89-3 | SOT-89-3 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden 2DB1188P-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir 2DB1188P-13 - Diodes Incorporated.
2DB1386Diodes Incorporated2DB1184Q-13-94Diodes Incorporated2DB1182Q-13Diodes IncorporatedTRANS PNP 32V 2A TO252-32DB1188Diodes Incorporated2DB1132R-13-GIGADiodes Incorporated2DB1188R-13-01Diodes Incorporated2DB1188Q-13Diodes IncorporatedTRANS PNP 32V 2A SOT89-32DB1386Q-7Diodes Incorporated2DB1188R-7Diodes Incorporated2DB1184 Q2DB1132R-7Diodes Incorporated2DB1188R-13Diodes IncorporatedTRANS PNP 32V 2A SOT89-32DB1184QDIDEOS2DB1184Q-13Diodes IncorporatedTRANS PNP 50V 3A TO252-32DB1188PDiodes Incorporated2DB1188P-7Diodes Incorporated2DB1386Q-13Diodes IncorporatedTRANS PNP 20V 5A SOT89-32DB1188Q-7Diodes Incorporated| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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