1N5819HW-7 Tech Spezifikatioune
Diodes Incorporated - 1N5819HW-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - 1N5819HW-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Viru (Vf) (Max) @ Wann | 450 mV @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 40 V | |
| Technologie | Schottky | |
| Supplier Device Package | SOD-123 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | SOD-123 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 1 mA @ 40 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 60pF @ 4V, 1MHz | |
| Basis Produktnummer | 1N5819 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated 1N5819HW-7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N5819HW-7 | 1N5819HW1-7-F | 1N5819HWQ-7-F | 1N5819M-13 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Voltage - DC Reverse (Vr) (Max) | 40 V | 40 V | 40 V | 40 V |
| Voltage - Viru (Vf) (Max) @ Wann | 450 mV @ 1 A | 510 mV @ 1 A | 450 mV @ 1 A | 600 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Cut Tape (CT) |
| Package / Case | SOD-123 | SOD-123F | SOD-123 | DO-213AB, MELF (Glass) |
| Serie | - | SBR® | Automotive, AEC-Q101 | - |
| Capacitance @ Vr, F. | 60pF @ 4V, 1MHz | 30pF @ 10V, 1MHz | 50pF @ 4V, 1MHz | - |
| Basis Produktnummer | 1N5819 | 1N5819 | 1N5819 | 1N5819 |
| Supplier Device Package | SOD-123 | SOD-123F | SOD-123 | MELF |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | -55°C ~ 125°C | -65°C ~ 125°C | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Technologie | Schottky | Super Barrier | Schottky | Schottky |
| Aktuell - Reverse Leakage @ Vr | 1 mA @ 40 V | 500 µA @ 40 V | 1 mA @ 40 V | 1 mA @ 40 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden 1N5819HW-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir 1N5819HW-7 - Diodes Incorporated.
1N5819/SS14TOSHIBA/GC1N5819HW1-7-FDiodes IncorporatedDIODE SBR 40V 1A SOD123F1N5819HWSIPUSEMI1N5819M-13-FDiodes Incorporated1N5819HWQ-7-FDiodes IncorporatedDIODE SCHOTTKY 40V 1A SOD1231N5819M-13Diodes IncorporatedDIODE SCHOTTKY 40V 1A MELF
1N5819GMicrochip TechnologyDIODE SCHOTTKY 40V 1A DO411N5819GonsemiDIODE SCHOTTKY 40V 1A AXIAL
1N5819MElectro-Films (EFI) / Vishay1N5819AXX
1N5819-TPMicro Commercial CoDIODE SCHOTTKY 40V 1A DO411N5819LT1GCJ1N5819HW-7-GDiodes IncorporatedDIODE SCHOTTKY 40V 1A SOD1231N5819FLPJ1N5819HW-7-FDiodes IncorporatedDIODE SCHOTTKY 40V 1A SOD1231N5819HW-7-F##QQQQQQQQ1N5819A-01Diodes IncorporatedDIODE SCHOTTKY DO411N5819HSKEFAN| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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