1N5818-T Tech Spezifikatioune
Diodes Incorporated - 1N5818-T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - 1N5818-T
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Viru (Vf) (Max) @ Wann | 550 mV @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 30 V | |
| Technologie | Schottky | |
| Supplier Device Package | DO-41 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-204AL, DO-41, Axial |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 1 mA @ 30 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 110pF @ 4V, 1MHz | |
| Basis Produktnummer | 1N5818 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated 1N5818-T.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N5818-T | 1N5818G | 1N5818 | 1N5818RLG |
| Hiersteller | Diodes Incorporated | onsemi | Diotec Semiconductor | onsemi |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AC, DO-15, Axial | DO-204AL, DO-41, Axial |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | -65°C ~ 125°C | -50°C ~ 150°C | -65°C ~ 125°C |
| Basis Produktnummer | 1N5818 | 1N5818 | - | 1N5818 |
| Aktuell - Reverse Leakage @ Vr | 1 mA @ 30 V | 1 mA @ 30 V | 1 mA @ 30 V | 1 mA @ 30 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Capacitance @ Vr, F. | 110pF @ 4V, 1MHz | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| Voltage - DC Reverse (Vr) (Max) | 30 V | 30 V | 30 V | 30 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Supplier Device Package | DO-41 | Axial | DO15/DO204AC | Axial |
| Serie | - | - | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 550 mV @ 1 A | 550 mV @ 1 A | 875 mV @ 3 A | 550 mV @ 1 A |
Eroflueden 1N5818-T PDF DataDhusts an Diodes Incorporated Dokumentatioun fir 1N5818-T - Diodes Incorporated.
1N5818GonsemiDIODE SCHOTTKY 30V 1A AXIAL1N5818MGS
1N5817WWSDiodes Incorporated1N5818Diotec SemiconductorDIODE SCHOTTKY 30V 1A DO151N5818RLGonsemiDIODE SCHOTTKY 30V 1A AXIAL1N5819onsemiDIODE SCHOTTKY 40V 1A DO411N5819Microchip TechnologyDIODE SCHOTTKY 45V 1A DO411N5818WJINGDAO
1N5819STMicroelectronicsDIODE SCHOTTKY 40V 1A DO41
1N5818-E3/54Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 30V 1A DO204AL1N5818STMicroelectronicsDIODE SCHOTTKY 30V 1A DO411N5818Taiwan Semiconductor CorporationDIODE SCHOTTKY 30V 1A DO204AL1N5818NTE Electronics, IncDIODE SCHOTTKY 30V 1A DO411N5818Microchip TechnologyDIODE SCHOTTKY 30V 1A DO41
1N5818Fairchild SemiconductorDIODE SCHOTTKY 30V 1A DO151N5818onsemiDIODE SCHOTTKY 30V 1A DO411N5818/SS16TOSHIBA/GC1N5818A-01Diodes IncorporatedDIODE SCHOTTKY DO41| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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