SPU11N10 Tech Spezifikatioune
Infineon Technologies - SPU11N10 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SPU11N10
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 21µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | P-TO251-3-1 | |
| Serie | SIPMOS® | |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.8A, 10V | |
| Power Dissipation (Max) | 50W (Tc) | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 18.3 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.5A (Tc) | |
| Basis Produktnummer | SPU11N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SPU11N10.
| Produktiounsattriff |  |
|
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|---|---|---|---|---|
| Part Number | SPU11N10 | SPU07N60S5 | SPU09P06PL | SPU08P06P |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Supplier Device Package | P-TO251-3-1 | PG-TO251-3-21 | P-TO251-3-1 | PG-TO251-3 |
| Vgs (th) (Max) @ Id | 4V @ 21µA | 5.5V @ 350µA | 2V @ 250µA | 4V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 100 V | 600 V | 60 V | 60 V |
| Serie | SIPMOS® | CoolMOS™ | SIPMOS® | SIPMOS® |
| FET Feature | - | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V | - |
| Basis Produktnummer | SPU11N | SPU07N | SPU09P | SPU08P |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.5A (Tc) | 7.3A (Tc) | 9.7A (Tc) | 8.83A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V | 970 pF @ 25 V | 450 pF @ 25 V | 420 pF @ 25 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | - |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.8A, 10V | 600mOhm @ 4.6A, 10V | 250mOhm @ 6.8A, 10V | 300mOhm @ 6.2A, 10V |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
| FET Typ | N-Channel | N-Channel | P-Channel | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18.3 nC @ 10 V | 35 nC @ 10 V | 21 nC @ 10 V | 13 nC @ 10 V |
| Power Dissipation (Max) | 50W (Tc) | 83W (Tc) | 42W (Tc) | 42W (Tc) |
Eroflueden SPU11N10 PDF DataDhusts an Infineon Technologies Dokumentatioun fir SPU11N10 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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