SPS02N60C3 Tech Spezifikatioune
Infineon Technologies - SPS02N60C3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SPS02N60C3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.9V @ 80µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO251-3-11 | |
Serie | CoolMOS™ | |
Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V | |
Power Dissipation (Max) | 25W (Tc) | |
Package / Case | TO-251-3 Stub Leads, IPak | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.8A (Tc) | |
Basis Produktnummer | SPS02N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SPS02N60C3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SPS02N60C3 | SPS01N60C3 | SPS04N60C3 | SPS03N60C3 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.8A (Tc) | 800mA (Tc) | 4.5A (Tc) | 3.2A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V | 5 nC @ 10 V | 25 nC @ 10 V | 17 nC @ 10 V |
Power Dissipation (Max) | 25W (Tc) | 11W (Tc) | 50W (Tc) | 38W (Tc) |
Entworf fir Source Voltage (Vdss) | 650 V | 650 V | 600 V | 600 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Basis Produktnummer | SPS02N | SPS01N | - | SPS03N |
Serie | CoolMOS™ | CoolMOS™ | CoolMOS™ | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V | 6Ohm @ 500mA, 10V | 950mOhm @ 2.8A, 10V | 1.4Ohm @ 2A, 10V |
Package protegéieren | Tube | Tube | Bulk | Bulk |
Package / Case | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak | TO-251-3 Stub Leads, IPak |
Vgs (th) (Max) @ Id | 3.9V @ 80µA | 3.9V @ 250µA | 3.9V @ 200µA | 3.9V @ 135µA |
Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V | 100 pF @ 25 V | 490 pF @ 25 V | 400 pF @ 25 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO251-3-11 | PG-TO251-3-11 | PG-TO251 | PG-TO251-3-11 |
Eroflueden SPS02N60C3 PDF DataDhusts an Infineon Technologies Dokumentatioun fir SPS02N60C3 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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