SPP12N50C3 Tech Spezifikatioune
Infineon Technologies - SPP12N50C3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SPP12N50C3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.9V @ 500µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO220-3-1 | |
| Serie | CoolMOS™ | |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V | |
| Power Dissipation (Max) | 125W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 500 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.6A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SPP12N50C3.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | SPP12N50C3 | SPP11N65C3 | SPP11N80C3 | SPP15N60C3 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | - |
| Package protegéieren | Bulk | Bulk | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | - | 1600 pF @ 100 V | 1660 pF @ 25 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.6A (Tc) | - | 11A (Tc) | 15A (Tc) |
| Supplier Device Package | PG-TO220-3-1 | - | PG-TO220-3-1 | PG-TO220-3-1 |
| Power Dissipation (Max) | 125W (Tc) | - | 156W (Tc) | 156W (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V | - | 450mOhm @ 7.1A, 10V | 280mOhm @ 9.4A, 10V |
| Mounting Type | Through Hole | - | Through Hole | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V | - | 85 nC @ 10 V | 63 nC @ 10 V |
| Serie | CoolMOS™ | * | - | - |
| Entworf fir Source Voltage (Vdss) | 500 V | - | 800 V | 600 V |
| FET Typ | N-Channel | - | N-Channel | N-Channel |
| Package / Case | TO-220-3 | - | TO-220-3 | TO-220-3 |
| Vgs (th) (Max) @ Id | 3.9V @ 500µA | - | 3.9V @ 680µA | 3.9V @ 675µA |
| Vgs (Max) | ±20V | - | ±20V | ±20V |
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SPP15P10PInfineon TechnologiesMOSFET P-CH 100V 15A TO220-3SPP15P10P HInfineon TechnologiesP-CHANNEL POWER MOSFET| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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