SPP10N10 Tech Spezifikatioune
Infineon Technologies - SPP10N10 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SPP10N10
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 21µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO220-3-1 | |
Serie | SIPMOS® | |
Rds On (Max) @ Id, Vgs | 170mOhm @ 7.8A, 10V | |
Power Dissipation (Max) | 50W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 426 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 19.4 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.3A (Tc) | |
Basis Produktnummer | SPP10N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SPP10N10.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SPP10N10 | SPP100N08S2-07 | SPP11N60S5 MOS | SPP11N60C2 |
Hiersteller | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) | Cypress Semiconductor (Infineon Technologies) |
Supplier Device Package | PG-TO220-3-1 | PG-TO220-3-1 | - | - |
Vgs (th) (Max) @ Id | 4V @ 21µA | 4V @ 250µA | - | - |
Package / Case | TO-220-3 | TO-220-3 | - | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | - |
Entworf fir Source Voltage (Vdss) | 100 V | 75 V | - | - |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 426 pF @ 25 V | 6020 pF @ 25 V | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.3A (Tc) | 100A (Tc) | - | - |
Serie | SIPMOS® | OptiMOS™ | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | - | - |
Gate Charge (Qg) (Max) @ Vgs | 19.4 nC @ 10 V | 200 nC @ 10 V | - | - |
Rds On (Max) @ Id, Vgs | 170mOhm @ 7.8A, 10V | 7.1mOhm @ 66A, 10V | - | - |
Vgs (Max) | ±20V | ±20V | - | - |
Power Dissipation (Max) | 50W (Tc) | 300W (Tc) | - | - |
Package protegéieren | Tube | Tube | - | - |
Mounting Type | Through Hole | Through Hole | - | - |
Basis Produktnummer | SPP10N | SPP100N | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
FET Typ | N-Channel | N-Channel | - | - |
Eroflueden SPP10N10 PDF DataDhusts an Infineon Technologies Dokumentatioun fir SPP10N10 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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