SPP100N06S2L-05 Tech Spezifikatioune
Infineon Technologies - SPP100N06S2L-05 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SPP100N06S2L-05
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO220-3-1 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V | |
| Power Dissipation (Max) | 300W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 7530 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 55 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | |
| Basis Produktnummer | SPP100N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SPP100N06S2L-05.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SPP100N06S2L-05 | SPP100N03S2-03 | SPP08N80C3 | SPP100N03S2L-03 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Serie | OptiMOS™ | OptiMOS™ | CoolMOS™ | OptiMOS™ |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Entworf fir Source Voltage (Vdss) | 55 V | 30 V | 800 V | 30 V |
| Supplier Device Package | PG-TO220-3-1 | PG-TO220-3-1 | PG-TO220-3-1 | PG-TO220-3-1 |
| Power Dissipation (Max) | 300W (Tc) | 300W (Tc) | 104W (Tc) | 300W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 7530 pF @ 25 V | 7020 pF @ 25 V | 1100 pF @ 100 V | 8180 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V | 3.3mOhm @ 80A, 10V | 650mOhm @ 5.1A, 10V | 3mOhm @ 80A, 10V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 4V @ 250µA | 3.9V @ 470µA | 2V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | 100A (Tc) | 8A (Tc) | 100A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Package protegéieren | Tube | Tube | Bulk | Tube |
| FET Feature | - | - | - | - |
| Basis Produktnummer | SPP100N | SPP100N | - | SPP100N |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V | 150 nC @ 10 V | 60 nC @ 10 V | 220 nC @ 10 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden SPP100N06S2L-05 PDF DataDhusts an Infineon Technologies Dokumentatioun fir SPP100N06S2L-05 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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