SPB80P06P Tech Spezifikatioune
Infineon Technologies - SPB80P06P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SPB80P06P
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 5.5mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO263-3-2 | |
| Serie | SIPMOS® | |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 64A, 10V | |
| Power Dissipation (Max) | 340W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 5033 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 173 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | |
| Basis Produktnummer | SPB80P |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SPB80P06P.
| Produktiounsattriff |  |
|
|
|
|---|---|---|---|---|
| Part Number | SPB80P06P | SPB80P06PGATMA1 | SPB80N08S2-07 | SPB80N08S2L-07 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Power Dissipation (Max) | 340W (Tc) | 340W (Tc) | 300W (Tc) | 300W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 173 nC @ 10 V | 173 nC @ 10 V | 180 nC @ 10 V | 233 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 75 V | 75 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 64A, 10V | 23mOhm @ 64A, 10V | 7.1mOhm @ 66A, 10V | 6.8mOhm @ 67A, 10V |
| Basis Produktnummer | SPB80P | SPB80P06 | SPB80N | SPB80N |
| Serie | SIPMOS® | SIPMOS® | OptiMOS™ | OptiMOS™ |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) |
| FET Typ | P-Channel | P-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
| Input Capacitance (Ciss) (Max) @ Vds | 5033 pF @ 25 V | 5033 pF @ 25 V | 6130 pF @ 25 V | 6820 pF @ 25 V |
| Vgs (th) (Max) @ Id | 4V @ 5.5mA | 4V @ 5.5mA | 4V @ 250µA | 2V @ 250µA |
| FET Feature | - | - | - | - |
Eroflueden SPB80P06P PDF DataDhusts an Infineon Technologies Dokumentatioun fir SPB80P06P - Infineon Technologies.
SPBG34SVRSAKSPB80P06PGATMA1Infineon TechnologiesMOSFET P-CH 60V 80A TO263-3
SPBI11N60C3 MOSCypress Semiconductor (Infineon Technologies)SPB80P06PG 80P06Cypress Semiconductor (Infineon Technologies)SPBG56SHITACHISPB80N08S2-07 E3045ACypress Semiconductor (Infineon Technologies)SPB80N10LGCypress Semiconductor (Infineon Technologies)SPB80N08S2-07Infineon TechnologiesMOSFET N-CH 75V 80A TO263-3SPB80N08S2Cypress Semiconductor (Infineon Technologies)SPB80N08S2-07 2N0807Cypress Semiconductor (Infineon Technologies)SPB80N08S2L-07Infineon TechnologiesMOSFET N-CH 75V 80A TO263-3SPB80P06P 80P06PCypress Semiconductor (Infineon Technologies)SPB80P06P MOSCypress Semiconductor (Infineon Technologies)SPB80N10L MOSCypress Semiconductor (Infineon Technologies)SPB80N10LInfineon TechnologiesMOSFET N-CH 100V 80A TO263-3SPB80N06S2L-H5 2N06LH5Cypress Semiconductor (Infineon Technologies)SPB80P06PGCypress Semiconductor (Infineon Technologies)SPB80P06PG MOSCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.