SI3443DVTR Tech Spezifikatioune
Infineon Technologies - SI3443DVTR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SI3443DVTR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | Micro6™(TSOP-6) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4.4A, 4.5V | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Cut Tape (CT) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1079 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.4A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SI3443DVTR.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | SI3443DVTR | SI3445ADV-T1-E3 | SI3445DV | SI3443DVTRPBF |
| Hiersteller | Infineon Technologies | Vishay Siliconix | Fairchild Semiconductor | Infineon Technologies |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Serie | - | - | PowerTrench® | HEXFET® |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Package protegéieren | Cut Tape (CT) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Entworf fir Source Voltage (Vdss) | 20 V | 8 V | 20 V | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1079 pF @ 10 V | - | 1926 pF @ 10 V | 1079 pF @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V | 19 nC @ 4.5 V | 30 nC @ 4.5 V | 15 nC @ 4.5 V |
| Supplier Device Package | Micro6™(TSOP-6) | 6-TSOP | SuperSOT™-6 | Micro6™(TSOP-6) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4.4A, 4.5V | 42mOhm @ 5.8A, 4.5V | 33mOhm @ 5.5A, 4.5V | 65mOhm @ 4.4A, 4.5V |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1V @ 250µA | 1.5V @ 250µA | 1.2V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.4A (Ta) | 4.4A (Ta) | 5.5A (Ta) | 4.4A (Ta) |
Eroflueden SI3443DVTR PDF DataDhusts an Infineon Technologies Dokumentatioun fir SI3443DVTR - Infineon Technologies.
SI3445ADV-T1-E3Vishay SiliconixMOSFET P-CH 8V 4.4A 6TSOPSI3443DV-NLFairchild (onsemi)
SI3445DV-T1SISI3445DVFairchild SemiconductorP-CHANNEL MOSFET
SI3443DV-TIElectro-Films (EFI) / VishaySI3443DVTRPBFInfineon TechnologiesMOSFET P-CH 20V 4.4A MICRO6SI3443DVTRPBF MOSIRSI3445DV-T1-GE3Vishay SiliconixMOSFET P-CH 8V 6TSOPSI3443DV 443NSILICONIXSI3443DV-T1-E3Electro-Films (EFI) / VishaySI3445ADV-T1Electro-Films (EFI) / VishaySI3445DV-T1-E3Vishay SiliconixMOSFET P-CH 8V 6TSOPSI3443DV-T5VISSi3443DV-T1-GE3Electro-Films (EFI) / VishaySI3443DV-NDElectro-Films (EFI) / VishaySI3443DV MOSFairchild (onsemi)SI3443DV_NLFairchild (onsemi)SI3443DV-T1SI| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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