IRLZ44Z Tech Spezifikatioune
Infineon Technologies - IRLZ44Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLZ44Z
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220AB | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 13.5mOhm @ 31A, 10V | |
Power Dissipation (Max) | 80W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 51A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLZ44Z.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRLZ44Z | IRLZ44SPBF | IRLZ44ZS | IRLZ44STRR |
Hiersteller | Infineon Technologies | Vishay Siliconix | Infineon Technologies | Vishay Siliconix |
Vgs (th) (Max) @ Id | 3V @ 250µA | 2V @ 250µA | 3V @ 250µA | 2V @ 250µA |
Power Dissipation (Max) | 80W (Tc) | 3.7W (Ta), 150W (Tc) | 80W (Tc) | 3.7W (Ta), 150W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V | 3300 pF @ 25 V | 1620 pF @ 25 V | 3300 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 51A (Tc) | 50A (Tc) | 51A (Tc) | 50A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4V, 5V | 4.5V, 10V | 4V, 5V |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 5 V | 66 nC @ 5 V | 36 nC @ 5 V | 66 nC @ 5 V |
Serie | HEXFET® | - | HEXFET® | - |
Package protegéieren | Tube | Tube | Tube | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 13.5mOhm @ 31A, 10V | 28mOhm @ 31A, 5V | 13.5mOhm @ 31A, 10V | 28mOhm @ 31A, 5V |
Supplier Device Package | TO-220AB | D²PAK (TO-263) | D2PAK | D²PAK (TO-263) |
Entworf fir Source Voltage (Vdss) | 55 V | 60 V | 55 V | 60 V |
Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±16V | ±10V | ±16V | ±10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
Eroflueden IRLZ44Z PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLZ44Z - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.