IRLR8726TRPBF Tech Spezifikatioune
Infineon Technologies - IRLR8726TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLR8726TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.35V @ 50µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 5.8mOhm @ 25A, 10V | |
Power Dissipation (Max) | 75W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 86A (Tc) | |
Basis Produktnummer | IRLR8726 |
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Produktiounsattriff | ||||
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Part Number | IRLR8726TRPBF | IRLR8721TRPBF | IRLR8729PBF | IRLR8726PBF |
Hiersteller | Infineon Technologies | Infineon Technologies | International Rectifier | International Rectifier |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Vgs (th) (Max) @ Id | 2.35V @ 50µA | 2.35V @ 25µA | 2.35V @ 25µA | 2.35V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V | 13 nC @ 4.5 V | 16 nC @ 4.5 V | 23 nC @ 4.5 V |
Power Dissipation (Max) | 75W (Tc) | 65W (Tc) | 55W (Tc) | 75W (Tc) |
Basis Produktnummer | IRLR8726 | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 15 V | 1030 pF @ 15 V | 1350 pF @ 15 V | 2150 pF @ 15 V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | - |
Supplier Device Package | D-Pak | D-Pak | TO-252AA | TO-252AA |
Rds On (Max) @ Id, Vgs | 5.8mOhm @ 25A, 10V | 8.4mOhm @ 25A, 10V | 8.9mOhm @ 25A, 10V | 5.8mOhm @ 25A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Bulk |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 86A (Tc) | 65A (Tc) | 58A (Tc) | 86A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Eroflueden IRLR8726TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLR8726TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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